Resources Contact Us Home
Multi-function planar light source illumination lamp

Image Number 2 for United States Patent #8092065.

The invention discloses a multi-function planar light source illumination lamp having a containing space and comprising a first lighting unit, a second lighting unit, a light guide unit and a control unit. The first lighting unit is used for generating a first light source arranged as a linear element. The second lighting unit is used for generating a second light source arranged as a punctual array. The light guide unit, disposed in the containing space, is used for providing the multi-function planar light source illumination lamp to generate a homogeneous planar light source. The control unit generates a control signal for controlling the first lighting unit and the second lighting unit to generate a luminous flux of the first light source and the second light source.

  Recently Added Patents
Lamp body with integrally molded heat sink
High-frequency power amplifier
Vehicle drive control system
Portable gaming device and gaming system combining both physical and virtual play elements
5-phenyl-pentanoic acid derivatives as matrix metalloproteinase inhibitors for the treatment of asthma and other diseases
Method, system and program for securing redundancy in parallel computing system
Piano keyboard with key touch point detection
  Randomly Featured Patents
Methods and apparatus for intelligently providing power to a device
Dog food reminder
Systems, methods and computer program products for averaging learned levels in the presence of digital impairments based on patterns
Field effect transistor array including refractory metal silicide interconnection layer
Bush bearing and rack-and-pinion type steering apparatus for automobile using the same
Dryer felt tension indicator apparatus
Method of forming a via having sloped sidewalls
Method and apparatus for obtaining enhanced NMR signals
Method and system for developing and delivering a therapeutic meal plan program
Superior ohmic contacts to III-V semiconductor by virtue of double donor impurity