Resources Contact Us Home
Modified DARC stack for resist patterning

Image Number 3 for United States Patent #8084366.

A method of making a device includes forming a device layer, forming an organic hard mask layer over the device layer, forming a first oxide hard mask layer over the organic hard mask layer, forming a DARC layer over the first oxide hard mask layer, forming a photoresist layer over the DARC layer, patterning the photoresist layer to form a photoresist pattern, and transferring the photoresist pattern to the device layer using the DARC layer, the first oxide hard mask layer and the organic hard mask layer.

  Recently Added Patents
Method for reserving network bandwidth for versioned network services
Parasitic element compensation circuit and method for compensating for the parasitic element
Electronic product design
Authoring method, authoring device and program
Personal alarm device for headwear for proximity detection
Method of analyzing cell structures and their components
  Randomly Featured Patents
Character reader
Charge control unit and charge control system for fuel injection valve
Supply unit for supplying a developer for a copying machine
Method of disposal of waste containing heavy metal
Wireless item locator doorbell
Hologram made by using a plurality of spherical waves and a device for laser beam scanning by using the hologram
Method of accessing cache memory for parallel processing processors
Game ball incorporating a polymer foam
Integrated chip optical devices
Screen blanker for a monitor of a computer system