Resources Contact Us Home
Modified DARC stack for resist patterning

Image Number 3 for United States Patent #8084366.

A method of making a device includes forming a device layer, forming an organic hard mask layer over the device layer, forming a first oxide hard mask layer over the organic hard mask layer, forming a DARC layer over the first oxide hard mask layer, forming a photoresist layer over the DARC layer, patterning the photoresist layer to form a photoresist pattern, and transferring the photoresist pattern to the device layer using the DARC layer, the first oxide hard mask layer and the organic hard mask layer.

  Recently Added Patents
System, method and computer program product for sharing a single instance of a database stored using a tenant of a multi-tenant on-demand database system
Maintenance tool of control systems
Illumination unit for a direct-view display
Method for production of fermentable sugars from biomass
Health monitoring of applications in a guest partition
Switchable memory diodes based on ferroelectric/conjugated polymer heterostructures and/or their composites
Plants and seeds of corn variety CV092363
  Randomly Featured Patents
Personal vaporizer inhaler
Polysaccharide compositions, preparation and uses
Lotion applicator
Automatic distributor-feeder with plural compartments for granular food for domestic animals
Card retainer and control means for information retrieval devices
Twin-gate type turnstile
Rhododendron plant named `Christine Belli`
Magnetron microwave generator with filament-life diagnostic circuit
Therapeutical use of phosphocreatine
Process for preparing arylaminopropanols