Resources Contact Us Home
Method of manufacturing semiconductor device and semiconductor device

Image Number 12 for United States Patent #8084340.

A method of manufacturing a semiconductor device whereby, even in cases where ions are implanted into a shallow region of a semiconductor substrate when a deep well is formed, the influence of the ions on a MOSFET can be removed, thereby eliminating the need for increasing the chip area. A photoresist with a thickness matching the wavelength of exposure light is formed over the semiconductor substrate and then is exposed to the exposure light to form a photoresist pattern with an opening corresponding to a region for forming a first well. Subsequently, using the photoresist pattern as a mask, ions are implanted to form the first well, and after the photoresist pattern is removed, an epitaxial layer is grown over the semiconductor substrate. Consequently, the deep well is virtually located deeper in level than at the time of the ion implantation by an amount corresponding to the thickness of the epitaxial layer.

  Recently Added Patents
System for implementing dynamic pseudorandom keyboard remapping
System and method for dynamic quality-of-service-based billing in a peer-to-peer network
Method and apparatus for transmitting and receiving extension information of component carrier in wireless communication system
Image forming apparatus
High-speed comparator with asymmetric frequency response
Under bump passive components in wafer level packaging
Battery terminal with current sensor
  Randomly Featured Patents
Margin calculator for the temporary staffing industry
Top drive casing system
Teletext decoder
Augmented reality-based firefighter training system and method
Human-body aimed spacer, human-body aimed airflow passage, and general-purpose spacer
Roller skate
Image processing apparatus and image processing method
Method for allocating a bandwidth between network terminals in a communication network and network including a medium access controller for performing such a method
Ni--Fe based forging superalloy excellent in high-temperature strength and high-temperature ductility, method of manufacturing the same, and steam turbine rotor
Systems and methods for vibration rectification error reduction in closed-loop accelerometer systems