Resources Contact Us Home
Method of manufacturing semiconductor device and semiconductor device

Image Number 12 for United States Patent #8084340.

A method of manufacturing a semiconductor device whereby, even in cases where ions are implanted into a shallow region of a semiconductor substrate when a deep well is formed, the influence of the ions on a MOSFET can be removed, thereby eliminating the need for increasing the chip area. A photoresist with a thickness matching the wavelength of exposure light is formed over the semiconductor substrate and then is exposed to the exposure light to form a photoresist pattern with an opening corresponding to a region for forming a first well. Subsequently, using the photoresist pattern as a mask, ions are implanted to form the first well, and after the photoresist pattern is removed, an epitaxial layer is grown over the semiconductor substrate. Consequently, the deep well is virtually located deeper in level than at the time of the ion implantation by an amount corresponding to the thickness of the epitaxial layer.

  Recently Added Patents
Motor device and method of manufacturing the same
Reducing voltage stress in a flyback converter design
Method for delivering a volatile material
Efficient file system metadata scanning using scoped snapshots
Image reading apparatus and image forming apparatus
Plants and seeds of corn variety CV778791
Imidazole derivatives used as TAFIa inhibitors
  Randomly Featured Patents
Vestibular stimulation systems and methods
Method and apparatus for securing the same hinged lid assembly to each of a plurality of different containers
Data transfer circuit for interfacing two bus systems that operate asynchronously with respect to each other
Method and system for detection of biomaterials using magnetic marker
Implantable pulse generators using rechargeable zero-volt technology lithium-ion batteries
Acoustic radiating membrane for a music box or striking watch
Vectorscope automatic burst positioning
Strip for holding plastic bags
Bottle tote with pocket