Resources Contact Us Home
Method of manufacturing semiconductor device and semiconductor device

Image Number 12 for United States Patent #8084340.

A method of manufacturing a semiconductor device whereby, even in cases where ions are implanted into a shallow region of a semiconductor substrate when a deep well is formed, the influence of the ions on a MOSFET can be removed, thereby eliminating the need for increasing the chip area. A photoresist with a thickness matching the wavelength of exposure light is formed over the semiconductor substrate and then is exposed to the exposure light to form a photoresist pattern with an opening corresponding to a region for forming a first well. Subsequently, using the photoresist pattern as a mask, ions are implanted to form the first well, and after the photoresist pattern is removed, an epitaxial layer is grown over the semiconductor substrate. Consequently, the deep well is virtually located deeper in level than at the time of the ion implantation by an amount corresponding to the thickness of the epitaxial layer.

  Recently Added Patents
Hierarchical binding and lookup of addresses in inter-process communications systems
Semiconductor device
Dynamically updating privacy settings in a social network
Multi-radio coexistence
Volume compensation within a photovoltaic device
Radio communication device and sequence length adjusting method
5-lipoxygenase-activating protein (FLAP) inhibitors
  Randomly Featured Patents
Apparatus and system having dry gene silencing compositions
Maize variety hybrid X08A188
Liquid styrenated phenolic compositions and processes for forming same
Battery control box handle
Power system having a voltage regulator with a notch filter
Container for storing and transporting a liquefied gas
Cryopump water drain
Amplifier circuit for minimizing output voltage power-up transients
Pusher game apparatus