Resources Contact Us Home
Method of manufacturing semiconductor device and semiconductor device

Image Number 12 for United States Patent #8084340.

A method of manufacturing a semiconductor device whereby, even in cases where ions are implanted into a shallow region of a semiconductor substrate when a deep well is formed, the influence of the ions on a MOSFET can be removed, thereby eliminating the need for increasing the chip area. A photoresist with a thickness matching the wavelength of exposure light is formed over the semiconductor substrate and then is exposed to the exposure light to form a photoresist pattern with an opening corresponding to a region for forming a first well. Subsequently, using the photoresist pattern as a mask, ions are implanted to form the first well, and after the photoresist pattern is removed, an epitaxial layer is grown over the semiconductor substrate. Consequently, the deep well is virtually located deeper in level than at the time of the ion implantation by an amount corresponding to the thickness of the epitaxial layer.

  Recently Added Patents
Invisible fence battery charger
Device and implantation system for electrical stimulation of biological systems
Method of manufacturing pipe with branch
Inspection tool for top guides of a boiling water reactor
System and method for internet based procurement of goods and services
Semiconductor chip, stack module, and memory card
Epilation apparatus
  Randomly Featured Patents
Low depth bottle crate
Lipstick tube
Blade and a method for making a blade
Flexible travel bag with integrated support to protect bag from wear
Wood stove
Hydrodealkylation of alkylaromatic hydrocarbons
Method of manufacturing a semiconductor device
Position data interpolation method, position detecting sensor and position measuring device
Cargo vehicle with drag reduction
Tampon detection system