Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method of manufacturing semiconductor device and semiconductor device










Image Number 12 for United States Patent #8084340.

A method of manufacturing a semiconductor device whereby, even in cases where ions are implanted into a shallow region of a semiconductor substrate when a deep well is formed, the influence of the ions on a MOSFET can be removed, thereby eliminating the need for increasing the chip area. A photoresist with a thickness matching the wavelength of exposure light is formed over the semiconductor substrate and then is exposed to the exposure light to form a photoresist pattern with an opening corresponding to a region for forming a first well. Subsequently, using the photoresist pattern as a mask, ions are implanted to form the first well, and after the photoresist pattern is removed, an epitaxial layer is grown over the semiconductor substrate. Consequently, the deep well is virtually located deeper in level than at the time of the ion implantation by an amount corresponding to the thickness of the epitaxial layer.








 
 
  Recently Added Patents
Image processing device, image forming apparatus, and non-transitory computer readable recording medium
Method and apparatus for soft information transfer between constituent processor circuits in a soft-value processing apparatus
Activated carbon cryogels and related methods
Memory controller including a hardware compression and decompression engine for managing system memory and graphical operations
Preserving user applied markings made to a hardcopy original document
Permeable pressure sensitive adhesive
Social community generated answer system with collaboration constraints
  Randomly Featured Patents
Clock
Portable telephone
Ethylene-alpha-olefin polymers, processes and uses
Method and apparatus for calculating confidence intervals
System and method for inspecting dynamically generated executable code
Preparation of p-aminobenzotrifluoride
Antimycotic substituted diphenyl-imidazolyl-methanes
3-(4,5-Dihydroisoxazol-5-yl)benzoylcyclohexenones and the use thereof as herbicides
Pressurized air system
Metal alloy