Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method of manufacturing semiconductor device and semiconductor device










Image Number 11 for United States Patent #8084340.

A method of manufacturing a semiconductor device whereby, even in cases where ions are implanted into a shallow region of a semiconductor substrate when a deep well is formed, the influence of the ions on a MOSFET can be removed, thereby eliminating the need for increasing the chip area. A photoresist with a thickness matching the wavelength of exposure light is formed over the semiconductor substrate and then is exposed to the exposure light to form a photoresist pattern with an opening corresponding to a region for forming a first well. Subsequently, using the photoresist pattern as a mask, ions are implanted to form the first well, and after the photoresist pattern is removed, an epitaxial layer is grown over the semiconductor substrate. Consequently, the deep well is virtually located deeper in level than at the time of the ion implantation by an amount corresponding to the thickness of the epitaxial layer.








 
 
  Recently Added Patents
Attribute information providing system
Linked area parameter adjustment for spinal cord stimulation and associated systems and methods
Belt with light
Inhibitors of bacterial nitric oxide synthase, and related screening methods
Power supply device
Method and apparatus for receiving signals in a MIMO system with multiple channel encoders
Compounds, compositions and use
  Randomly Featured Patents
Disk drive block ordering system
Iontophoretic delivery patch
Aqueous compositions containing nitrogen-containing salts
Tubular endoprosthesis for anatomical conduits
Wireless monitor voice indication parking indicator
Rotary powered dynamic shaving system with shaving aid
Contextual search of a collaborative environment
Sheet stacking apparatus
Automatic laser detecting surveyor's rod
Transgene expression systems