Resources Contact Us Home
Method of manufacturing semiconductor device and semiconductor device

Image Number 11 for United States Patent #8084340.

A method of manufacturing a semiconductor device whereby, even in cases where ions are implanted into a shallow region of a semiconductor substrate when a deep well is formed, the influence of the ions on a MOSFET can be removed, thereby eliminating the need for increasing the chip area. A photoresist with a thickness matching the wavelength of exposure light is formed over the semiconductor substrate and then is exposed to the exposure light to form a photoresist pattern with an opening corresponding to a region for forming a first well. Subsequently, using the photoresist pattern as a mask, ions are implanted to form the first well, and after the photoresist pattern is removed, an epitaxial layer is grown over the semiconductor substrate. Consequently, the deep well is virtually located deeper in level than at the time of the ion implantation by an amount corresponding to the thickness of the epitaxial layer.

  Recently Added Patents
Pre-colored methodology of multiple patterning
Dual protocol input device
Virtual physician acute myocardial infarction detection system and method
Music composition automation including song structure
Portable gaming device and gaming system combining both physical and virtual play elements
Wireless communication apparatus, a method of wireless communication, and a program for wireless communication
Managing breakpoints in a multi-threaded environment
  Randomly Featured Patents
Marine propulsion system
Scroll type compressor for gas-injection type refrigerating cycle
Sulfur-bearing residue treatment system
Combined crystal and LC filter
Bond strength measurement of composite panel products
Thermal test chamber device
Method and a circuit structure for modifying the threshold voltages of non-volatile memory cells
Virtualized data storage in a network computing environment
Hydrogen producing apparatus
Photographing device having plural range finding elements and plural photometric elements