Resources Contact Us Home
Method of manufacturing semiconductor device and semiconductor device

Image Number 11 for United States Patent #8084340.

A method of manufacturing a semiconductor device whereby, even in cases where ions are implanted into a shallow region of a semiconductor substrate when a deep well is formed, the influence of the ions on a MOSFET can be removed, thereby eliminating the need for increasing the chip area. A photoresist with a thickness matching the wavelength of exposure light is formed over the semiconductor substrate and then is exposed to the exposure light to form a photoresist pattern with an opening corresponding to a region for forming a first well. Subsequently, using the photoresist pattern as a mask, ions are implanted to form the first well, and after the photoresist pattern is removed, an epitaxial layer is grown over the semiconductor substrate. Consequently, the deep well is virtually located deeper in level than at the time of the ion implantation by an amount corresponding to the thickness of the epitaxial layer.

  Recently Added Patents
Can seam inspection
Reading apparatus and reading method
Methods and apparatus for adapting network characteristics in telecommunications systems
Computer product, information retrieval method, and information retrieval apparatus
Mono-body defibrillation probe
Inducement of organogenetic tolerance for pancreatic xenotransplant
  Randomly Featured Patents
Security seal with rupturable wall
Record carrier and apparatus for scanning the record carrier
Abrasion resistant heat pipe
Method and apparatus for selectively marking a semiconductor wafer
Forward error correction with self-synchronous scramblers
Method and system for operating a physical vapor deposition process
Method of fabricating a short-channel MOS device
Charge electrode assembly for ink jet printer
Simultaneous operation of a photographing device equipped communication apparatus
Postage metering system having currency synchronization