Resources Contact Us Home
Method of manufacturing semiconductor device and semiconductor device

Image Number 11 for United States Patent #8084340.

A method of manufacturing a semiconductor device whereby, even in cases where ions are implanted into a shallow region of a semiconductor substrate when a deep well is formed, the influence of the ions on a MOSFET can be removed, thereby eliminating the need for increasing the chip area. A photoresist with a thickness matching the wavelength of exposure light is formed over the semiconductor substrate and then is exposed to the exposure light to form a photoresist pattern with an opening corresponding to a region for forming a first well. Subsequently, using the photoresist pattern as a mask, ions are implanted to form the first well, and after the photoresist pattern is removed, an epitaxial layer is grown over the semiconductor substrate. Consequently, the deep well is virtually located deeper in level than at the time of the ion implantation by an amount corresponding to the thickness of the epitaxial layer.

  Recently Added Patents
Double patterning method using tilt-angle deposition
SRB enhancement on HS-DSCH during cell change
Wafer level packaging structure with large contact area and preparation method thereof
Materials and methods for synthesis of a flavor and aroma volatile in plants
Methods for predicting cardiac toxicity
LED illumination systems
Humidity indicator and method for fabricating the same
  Randomly Featured Patents
Distinct variety of Streptocarpus named Vreni
Modified asphalt binders and asphalt paving compositions
Benzimidazolone derivatives
Acoustic power transmitting unit for thermoacoustic systems
Elastomeric sleeve spring
Automated system for polynucleotide synthesis and purification
Data line drive circuit and method for driving data lines
Use of acoustic signals for measuring membrane fouling in spiral wound modules
Process for pig iron desulphurization
Type font