Resources Contact Us Home
Method for planarization of wafer and method for formation of isolation structure in top metal layer

Image Number 12 for United States Patent #8058175.

The invention discloses a planarization method for a wafer having a surface layer with a recess, comprises: forming an etching-resist layer on the surface layer to fill the entire recess; etching the etching-resist layer and the surface layer, till the surface layer outside the recess is flush to or lower than the bottom of the recess, the etching speed of the surface layer being higher than that of the etching-resist layer; removing the etching-resist layer; and etching the surface layer to a predetermined depth. The method can avoid concentric ring recesses on the surface of the wafer resulted from a chemical mechanical polishing (CMP) process in the prior art, and can be used to obtain a wafer surface suitable for optical applications.

  Recently Added Patents
Multi-user remote health monitoring system with biometrics support
Circuitry testing module and circuitry testing device
Method and system for filtering home-network content
Method and apparatus for linking a web browser link to a promotional offer
Retrievable outgoing audio messaging
Clusterin antisense therapy for treatment of cancer
Method and system for coding an information signal using closed loop adaptive bit allocation
  Randomly Featured Patents
Pressure equalizing flapper type safety valve for subterranean wells
Swivel organizer
Antenna for a wireless communication module
Apparatus and method for sensing a thrust load applied to a spindle of a machine tool
Display unit with two pockets
Gossypol and apogossypol derivatives, preparation thereof and uses thereof
Composite sheet and method of producing same
Magnetic fuel conditioner
Unitized fifth wheel and rear axle suspension
Nail enamel compositions having a decorative color effect