Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method for planarization of wafer and method for formation of isolation structure in top metal layer










Image Number 12 for United States Patent #8058175.

The invention discloses a planarization method for a wafer having a surface layer with a recess, comprises: forming an etching-resist layer on the surface layer to fill the entire recess; etching the etching-resist layer and the surface layer, till the surface layer outside the recess is flush to or lower than the bottom of the recess, the etching speed of the surface layer being higher than that of the etching-resist layer; removing the etching-resist layer; and etching the surface layer to a predetermined depth. The method can avoid concentric ring recesses on the surface of the wafer resulted from a chemical mechanical polishing (CMP) process in the prior art, and can be used to obtain a wafer surface suitable for optical applications.








 
 
  Recently Added Patents
Systems and methods of creative work collaborative systems
Spark plug and method of manufacturing the same
Light source apparatus and processing method
3D image display device and driving method thereof
Method for solubilising, dispersing and stabilising of substances, products manufactured according to the method as well as the use thereof
Code scoring
Low-viscosity liquid crystal compound
  Randomly Featured Patents
Endosseous implant
Digital camera
Hybrid subdivision in computer graphics
Imaging film comprising bismuth image-forming layer
Multiple-scan method for wafer particle analysis
Biologically active metal-containing nucleic acids
Inflatable flowing hole plug
Clamp based lesion formation apparatus with variable spacing structures
Keyboard switch
Method and apparatus for high power density plasma cutting system