Resources Contact Us Home
Method for planarization of wafer and method for formation of isolation structure in top metal layer

Image Number 12 for United States Patent #8058175.

The invention discloses a planarization method for a wafer having a surface layer with a recess, comprises: forming an etching-resist layer on the surface layer to fill the entire recess; etching the etching-resist layer and the surface layer, till the surface layer outside the recess is flush to or lower than the bottom of the recess, the etching speed of the surface layer being higher than that of the etching-resist layer; removing the etching-resist layer; and etching the surface layer to a predetermined depth. The method can avoid concentric ring recesses on the surface of the wafer resulted from a chemical mechanical polishing (CMP) process in the prior art, and can be used to obtain a wafer surface suitable for optical applications.

  Recently Added Patents
Calibration method for non-ideal transceivers
Display system with mounting assemblies and associated methods
Image processing apparatus, image processing system, and image processing method
Configurations and methods for effluent gas treatment
Conductor for transmitting electrical power
Optical imaging device and imaging method for microscopy
Tiger paw stationary tab
  Randomly Featured Patents
Terminal in an electric motor
Cooling water passage structure of internal combustion engines
Motion toy
Arithmetic processor for use in electronic computers
String dampener for a stringed musical instrument
Emergency air supply device for fire accident
Thermopile type detector with temperature sensor for cold junction
Geranium plant
Cycloolefin polymerization catalyst composition
Dock leveler lip actuation mechanism