Resources Contact Us Home
Method for planarization of wafer and method for formation of isolation structure in top metal layer

Image Number 11 for United States Patent #8058175.

The invention discloses a planarization method for a wafer having a surface layer with a recess, comprises: forming an etching-resist layer on the surface layer to fill the entire recess; etching the etching-resist layer and the surface layer, till the surface layer outside the recess is flush to or lower than the bottom of the recess, the etching speed of the surface layer being higher than that of the etching-resist layer; removing the etching-resist layer; and etching the surface layer to a predetermined depth. The method can avoid concentric ring recesses on the surface of the wafer resulted from a chemical mechanical polishing (CMP) process in the prior art, and can be used to obtain a wafer surface suitable for optical applications.

  Recently Added Patents
System, method and computer program product for efficient caching of hierarchical items
Managing imaging of computing devices
Image forming apparatus
Image processing device, image processing method, and program
Image processing apparatus, image processing system, and image processing method
Virtual physician acute myocardial infarction detection system and method
Double patterning method using tilt-angle deposition
  Randomly Featured Patents
Flexible base web for a construction covering
Fermented sour dough and method of making
Golf club head
Tool-less compression connector for coaxial cables
Switch circuit
Non-toxic fabric conductors and method for making same
Keyed wafer carrier
Pressure regulator vent piping coupler
Image reader
Winglet for fan blade