Resources Contact Us Home
Method for planarization of wafer and method for formation of isolation structure in top metal layer

Image Number 11 for United States Patent #8058175.

The invention discloses a planarization method for a wafer having a surface layer with a recess, comprises: forming an etching-resist layer on the surface layer to fill the entire recess; etching the etching-resist layer and the surface layer, till the surface layer outside the recess is flush to or lower than the bottom of the recess, the etching speed of the surface layer being higher than that of the etching-resist layer; removing the etching-resist layer; and etching the surface layer to a predetermined depth. The method can avoid concentric ring recesses on the surface of the wafer resulted from a chemical mechanical polishing (CMP) process in the prior art, and can be used to obtain a wafer surface suitable for optical applications.

  Recently Added Patents
Servo write assembly
Image reconstruction iterative method
Monitoring system
Method and system for fail-safe call survival
Lubricating oil compositions
Wireless communication power control
Base station synchronization for a single frequency network
  Randomly Featured Patents
Application of material to a substrate
Desk lamp
Light emitting diode light bar
Transmission interface unit in transmission system
Almond tree
Method for tag plane growth and contraction for improving object edge rendering
Assembly for sealing and pressure equalization of a submersible housing
Integrated sleep diagnostic and therapeutic system and method
Diagnostic and therapeutic targets for leukemia
Greeting card display