Resources Contact Us Home
Method for planarization of wafer and method for formation of isolation structure in top metal layer

Image Number 11 for United States Patent #8058175.

The invention discloses a planarization method for a wafer having a surface layer with a recess, comprises: forming an etching-resist layer on the surface layer to fill the entire recess; etching the etching-resist layer and the surface layer, till the surface layer outside the recess is flush to or lower than the bottom of the recess, the etching speed of the surface layer being higher than that of the etching-resist layer; removing the etching-resist layer; and etching the surface layer to a predetermined depth. The method can avoid concentric ring recesses on the surface of the wafer resulted from a chemical mechanical polishing (CMP) process in the prior art, and can be used to obtain a wafer surface suitable for optical applications.

  Recently Added Patents
System and method for deposition in high aspect ratio magnetic writer heads
Direct converting apparatus, method for controlling the same, and control signal generation device
Mobile communication device monitoring systems and methods
Data portal for concurrent assessment
Compact bus bar assembly, switching device and power distribution system
Brushless motor drive apparatus and drive method
Housekeeping cart
  Randomly Featured Patents
1-aminoethylquinoline derivatives for treating urinary incontinence
Real-time operating parameter selection in a vehicular transmission
Toothpaste dispenser
Ceramic slurry composition, method for producing thin green sheet by extrusion, and electronic device fabricated using the green sheet
Apparatus and method for forming an ultrasound image
Wiper with self compensating blade park position
Male component of press-stud particularly for items of clothing
Logic circuits having linear and cellular gate transistors
Fast and reliable data carrier detection by a cable modem in a cable television plant
Dual temperature closed loop cooling system