Resources Contact Us Home
Method for planarization of wafer and method for formation of isolation structure in top metal layer

Image Number 11 for United States Patent #8058175.

The invention discloses a planarization method for a wafer having a surface layer with a recess, comprises: forming an etching-resist layer on the surface layer to fill the entire recess; etching the etching-resist layer and the surface layer, till the surface layer outside the recess is flush to or lower than the bottom of the recess, the etching speed of the surface layer being higher than that of the etching-resist layer; removing the etching-resist layer; and etching the surface layer to a predetermined depth. The method can avoid concentric ring recesses on the surface of the wafer resulted from a chemical mechanical polishing (CMP) process in the prior art, and can be used to obtain a wafer surface suitable for optical applications.

  Recently Added Patents
High-density fiber optic modules and module housings and related equipment
Systems and methods for automated institutional processing of payments
Device for transmitting data between a serial data bus and working modules such as actuator modules and/or I/O modules
Delay interferometer using magneto-optic effect of a variable faraday rotator
Direct connect single layer touch panel
Single mode optical fiber with improved bend performance
Method, apparatus and computer program product for visualizing whole streets based on imagery generated from panoramic street views
  Randomly Featured Patents
System for contactless power and data transmission
Exhaust gas aftertreatment system
Razor handle assembly
Cruise control overspeed reduction with automatic transmission
Material layering device
Curable epoxy resins
N'-(2-Hydroxyalkyl)-N, N, N'-trimethyl-propylene diamines as catalysts for polyurethane foams
Image forming apparatus
Compressible packer fluids and methods of making and using same
Multi-bar linkage knee with fixed rotation axis