Resources Contact Us Home
Method for planarization of wafer and method for formation of isolation structure in top metal layer

Image Number 11 for United States Patent #8058175.

The invention discloses a planarization method for a wafer having a surface layer with a recess, comprises: forming an etching-resist layer on the surface layer to fill the entire recess; etching the etching-resist layer and the surface layer, till the surface layer outside the recess is flush to or lower than the bottom of the recess, the etching speed of the surface layer being higher than that of the etching-resist layer; removing the etching-resist layer; and etching the surface layer to a predetermined depth. The method can avoid concentric ring recesses on the surface of the wafer resulted from a chemical mechanical polishing (CMP) process in the prior art, and can be used to obtain a wafer surface suitable for optical applications.

  Recently Added Patents
Battery module
Semiconductor device comprising a Fin and method for manufacturing the same
Authoring method, authoring device and program
Powder pulverising device
Wireless device and communication control method
Systems and/or methods for using air/wind power to charge/re-charge vehicle batteries
Near-field transducers for focusing light
  Randomly Featured Patents
Camptothecins with a modified lactone ring
Pulp feed for a papermaking machine
Method of degasifying liquid sulfur which contains hydrogen sulfide
Hydrodesulphurization of hydrocracked pitch
Air cleaning device
Communication method
Intra-amniotic loop catheter
Variable expansion ratio reaction engine
Apparatus and process for a global navigation satellite system meeting safety of life performance requirements
Support structure and driving mechanism for tilting, sliding edge dispensers