Resources Contact Us Home
Dielectric film and semiconductor device using dielectric film including hafnium, aluminum or silicon, nitrogen, and oxygen

Image Number 11 for United States Patent #8053311.

The present invention provides a dielectric film having a high permittivity and a high heat resistance. An embodiment of the present invention is a dielectric film (103) including a composite oxynitride containing an element A made of Hf, an element B made of Al or Si, and N and O, wherein mole fractions of the element A, the element B, and N expressed as B/(A+B+N) range from 0.015 to 0.095 and N/(A+B+N) equals or exceeds 0.045, and has a crystalline structure.

  Recently Added Patents
Method of generating integrated circuit model
Memory device program window adjustment
Semiconductor pressure sensor
Method and apparatus for pre-scheduling in closed-loop MU-MIMO antenna system
Portable massage apparatus
Manufacturing method for semiconductor device carrier and semiconductor package using the same
Method and system for checking citations
  Randomly Featured Patents
Axle with removable spindle and cam key
Production device for connecting rod
Catalytic method
Method of forming precision microspace, process for manufacturing member with precision microspace, and photosensitive laminated film
Three-dimensional interactive book
Packet-based clock signal
Individual bit line recovery circuits
Ear temperature monitor and method of temperature measurement
Filter candle
Fuel supply control apparatus for internal combustion engine and fuel supply control method thereof