Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Dielectric film and semiconductor device using dielectric film including hafnium, aluminum or silicon, nitrogen, and oxygen










Image Number 11 for United States Patent #8053311.

The present invention provides a dielectric film having a high permittivity and a high heat resistance. An embodiment of the present invention is a dielectric film (103) including a composite oxynitride containing an element A made of Hf, an element B made of Al or Si, and N and O, wherein mole fractions of the element A, the element B, and N expressed as B/(A+B+N) range from 0.015 to 0.095 and N/(A+B+N) equals or exceeds 0.045, and has a crystalline structure.








 
 
  Recently Added Patents
Apparatus, system, and method for non-interruptively updating firmware on a redundant hardware controller
Tiger paw stationary tab
Doherty amplifier circuit
Fuel cell system, and electric vehicle equipped with the fuel cell system
Charge pump and method of biasing deep N-well in charge pump
High-resolution, active reflector radio frequency ranging system
Display system with mounting assemblies and associated methods
  Randomly Featured Patents
Electromagnetic acoustic transducer fault detection circuit
Liquid sampling pipette with adjustable ejector
Image processing apparatus and image sensing apparatus
Applicator and method for applying fluid or paste product to targeted surface
Pelvis interface
Pad oxide protect sealed interface isolation process
Process for the preparation of an optically pure enantiomer of formoterol
Method and system for correction of fluoroscope image distortion
Figure drawing method and apparatus for drawings accentuated lines
Osteochondral implant procedure