Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Dielectric film and semiconductor device using dielectric film including hafnium, aluminum or silicon, nitrogen, and oxygen










Image Number 11 for United States Patent #8053311.

The present invention provides a dielectric film having a high permittivity and a high heat resistance. An embodiment of the present invention is a dielectric film (103) including a composite oxynitride containing an element A made of Hf, an element B made of Al or Si, and N and O, wherein mole fractions of the element A, the element B, and N expressed as B/(A+B+N) range from 0.015 to 0.095 and N/(A+B+N) equals or exceeds 0.045, and has a crystalline structure.








 
 
  Recently Added Patents
Hair motion compositor system for use in a hair/fur pipeline
Late loading rich media
Authorization method for location based services
Image coding apparatus and image decoding apparatus
System and method for providing advice to consumer regarding a payment transaction
Modification of an object replica
Monitoring apparatus for monitoring communication configurations of client devices
  Randomly Featured Patents
Method for manufacturing a piezoelectric/electrostrictive device
System and method for advanced interfaces for virtual environments
Pseudo-noise correlator for GPS spread-spectrum receiver
Scrub bars and methods for making same
Methods for conversion of update blocks based on comparison with a threshold size
Steering damper mounting structure
Passivated and stabilized porous mineral oxide supports and methods for the preparation and use of same
Self-condensing pH sensor and catheter apparatus
Method of determining optimal cell configuration based upon determined device location
System paging method and apparatus of heterogeneous wireless networks