Resources Contact Us Home
Dielectric film and semiconductor device using dielectric film including hafnium, aluminum or silicon, nitrogen, and oxygen

Image Number 11 for United States Patent #8053311.

The present invention provides a dielectric film having a high permittivity and a high heat resistance. An embodiment of the present invention is a dielectric film (103) including a composite oxynitride containing an element A made of Hf, an element B made of Al or Si, and N and O, wherein mole fractions of the element A, the element B, and N expressed as B/(A+B+N) range from 0.015 to 0.095 and N/(A+B+N) equals or exceeds 0.045, and has a crystalline structure.

  Recently Added Patents
Sterilizable film for aseptic packaging
Peer-to-peer method of deploying and managing executable code and associated plug-ins
Vacuum switch and electrode assembly therefor
Interconnecting virtual domains
Stacked thin-film superlattice thermoelectric devices
Flash memory apparatus and method for generating read voltage thereof
LCD driving circuit in which shift register units are driven by a first clock signal of fixed duty/amplitude and a second clock signal of variable duty/amplitude
  Randomly Featured Patents
Biodegradable film dressing and method for its formation
Termination circuits and methods therefor
Security document using optical fibers and authentication method
Subrate voice switching over switching and telecommunication networks
Apparatus, system, and method of power saving control, and power saving control program
Electronic timepiece
Method and devices for remanufacturing printer cartridges
Printing device having opening and shutting mechanism
Universal blow mold assembly
Silicon carbide power devices having increased voltage blocking capabilities