Resources Contact Us Home
Dielectric film and semiconductor device using dielectric film including hafnium, aluminum or silicon, nitrogen, and oxygen

Image Number 11 for United States Patent #8053311.

The present invention provides a dielectric film having a high permittivity and a high heat resistance. An embodiment of the present invention is a dielectric film (103) including a composite oxynitride containing an element A made of Hf, an element B made of Al or Si, and N and O, wherein mole fractions of the element A, the element B, and N expressed as B/(A+B+N) range from 0.015 to 0.095 and N/(A+B+N) equals or exceeds 0.045, and has a crystalline structure.

  Recently Added Patents
Watch chain
Camera with monitor
Display device and method of repairing display device
Electric rotating machine for vehicle
Mobile device case with storage compartment
Securing information by hiding identity on a computing device
  Randomly Featured Patents
Structural composites of fluoropolymers reinforced with continuous filament fibers
Systems, apparatus and fast methods for aligning images to external markers in near-to-eye display systems
Ventilated system for the collection of organic waste
Three-dimensional GUI windows with variable-speed perspective movement
Systems and methods for testing ground fault detection circuitry
Footwear sole
Lead frames with dielectric housings molded thereon
Seismic well logging system and method
Identification and characterization of a CURLY phenotype (CUR) in plants
Device for grooming the coats of animals