Resources Contact Us Home
Nanoparticle cap layer

Image Number 4 for United States Patent #8039379.

Functionalized nanoparticles are deposited on metal lines inlaid in dielectric to form a metal cap layer that reduces electromigration in the metal line. The functionalized nanoparticles are deposited onto activated metal surfaces, then sintered and annealed to remove the functional agents leaving behind a continuous capping layer. The resulting cap layer is about 1 to 10 nm thick with 30-100% atomic of the nanoparticle material. Various semiconductor processing tools may be adapted for this deposition process without adding footprint in the semiconductor fabrication plant.

  Recently Added Patents
Substrate and patterning device for use in metrology, metrology method and device manufacturing method
High power insulated gate bipolar transistors
Method for preparing a .beta.-SiAlON phosphor
Electronic device
Method for manufacturing semiconductor element and semiconductor device, and deposition apparatus
Area efficient through-hole connections
Nonvolatile semiconductor memory device
  Randomly Featured Patents
System and method for managing trading using alert messages for outlying trading orders
Bracing system for stringed instrument
Acceleration override means for a fuel control
Production of a resist image
Charged particle beam column and method of operating same
Radio frequency identification (RFID) based authentication methodology using standard and private frequency RFID tags
Snow slide kit
Stent and stent graft
Thermoplastic resin composition and process for producing the same