Resources Contact Us Home
Method of manufacturing a trench MOSFET having trench contacts integrated with trench Schottky rectifiers having planar contacts

Image Number 6 for United States Patent #8034686.

An integrated configuration comprising trench MOSFET having trench contacts and trench Schottky rectifier having planar contacts is disclosed. The trench contacts for trench MOSFET provide a lower specific on-resistance. Besides, for trench gate connection, planar gate contact is employed in the present invention to avoid shortage issue between gate and drain in shallow trench gate. Besides, W plugs filled into both trench contacts and planar contacts enhance the metal step coverage capability.

  Recently Added Patents
System for presenting media services
Vending machine
Digital X-ray detector arrangement and digital X-ray imaging method
Double diffused metal oxide semiconductor device and manufacturing method thereof
Fabrication of high gradient insulators by stack compression
Solar power system with communication network utilizing magnetic fields
Mobile phone
  Randomly Featured Patents
Registering a resource that delegates commit voting
Transparent transport
Communications network for identifying the location of articles relative to a floor plan
Radar cross section measurement pylon terminating device
Magnetic recording method, apparatus therefor, and device for determining coercive force of magnetic recording medium
Audio processing in a social environment
Recombinant fowlpox vaccine for protection against Marek's disease
Method and system for selecting providers for role based services
Pet seat arrangement