Resources Contact Us Home
Semiconductor device

Image Number 2 for United States Patent #8030717.

A disclosed semiconductor device includes a gate insulation film formed on a silicon substrate and a metal gate electrode formed in the gate insulation film, wherein the gate insulation film includes a first insulation film, a second insulation film that is formed on the first insulation film and has a greater dielectric constant than the first insulation film, and a third insulation film formed on the second insulation film.

  Recently Added Patents
Message processing method and apparatus based on the SIP protocol and an IP communication system
Method of preparing MgB.sub.2 superconducting wire and the MgB.sub.2 superconducting wire prepared thereby
Electric connection box
Vibration disturbance estimation and control
Fuel-based injection control
Case of electronic device having antenna pattern embedded therein and mold and method for manufacturing the same
Method and system for modeling a common-language speech recognition, by a computer, under the influence of a plurality of dialects
  Randomly Featured Patents
Session restoration upon return to EV-DO
Cosmetic package with operation for modifying visual perception
Process for the preparation of tertiary olefins
Method of cutting laminated glass with laser beams
Immersion type metal degreaser with compression-expansion system for heating and cooling of liquid solvent and solvent vapors
Functionalized drugs and polymers derived therefrom
Method of polishing the inner peripheral end surfaces of substrates for a recording medium using a brush
Soft-limited digital pulse compressor
Cushioning product and method and apparatus for making same
Remote control device and method employing random addressing