Resources Contact Us Home
Semiconductor device

Image Number 2 for United States Patent #8030717.

A disclosed semiconductor device includes a gate insulation film formed on a silicon substrate and a metal gate electrode formed in the gate insulation film, wherein the gate insulation film includes a first insulation film, a second insulation film that is formed on the first insulation film and has a greater dielectric constant than the first insulation film, and a third insulation film formed on the second insulation film.

  Recently Added Patents
Use of tris(hydroxymethyl) aminomethane for the stabilization of peptides, polypeptides and proteins
Method of fabricating semiconductor light emitting device
Reaction medium for detecting and/or identifying bacteria of the Legionella genus
Particulate filter with hydrogen sulphide block function
Topology discovery, control channel establishment, and datapath provisioning within an aggregation network with centralized control
Catalytic pyrolysis using UZM-44 aluminosilicate zeolite
Nitrogen and hindered phenol containing dual functional macromolecular antioxidants: synthesis, performances and applications
  Randomly Featured Patents
Housing for an electrophoresis apparatus or similar article
Creasing device in accordance with sheet kind
In-mold hinge assembly and method of fabricating the same
Method of preparing polyester powder
Alternating copolymer of organopolysiloxane with grycerol derivative and a cosmetic comprising the same
High powered tri-mode light show
System and computer-implemented method for modeling the three-dimensional shape of an object by shading of a two-dimensional image of the object
Device to secure snow guard to roof using a wedge
Braking device for use with climbing lines
Clasp for closable articles