Resources Contact Us Home
Semiconductor device

Image Number 2 for United States Patent #8030717.

A disclosed semiconductor device includes a gate insulation film formed on a silicon substrate and a metal gate electrode formed in the gate insulation film, wherein the gate insulation film includes a first insulation film, a second insulation film that is formed on the first insulation film and has a greater dielectric constant than the first insulation film, and a third insulation film formed on the second insulation film.

  Recently Added Patents
Mirror elements for EUV lithography and production methods therefor
Real-time virtual endoscopy
Systems and methods for flow mirroring with network-scoped connection-oriented sink
Extension of physical downlink control channel coverage
Method to trace video content processed by a decoder
Electric rotating machine for vehicle
Single-stage PFC converter with constant voltage and constant current
  Randomly Featured Patents
Tool for a surface treating appliance
Retaining clip for printer cartridge
Method for producing homocystine
Housing assembly for miniature electronic device
Low insertion force connection arrangement
Soft magnetic material and powder magnetic core
LCD alarm clock
Distributed amplifier with improved flatness of frequency characteristic
Audio cassette tape player combined with clock and radio receiver
Heating unit and control system for cooktops having capability to detect presence of a pan and methods of operating same