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GeSiSn-based compounds, templates, and semiconductor structures










Image Number 3 for United States Patent #8029905.

The present invention provides novel compounds of the formula Gei-x-ySixSny, wherein 0.01<y<0.11, and 0.26<x<0.35, and semiconductor structures comprising such compounds. The present invention also provides novel semiconductor structures comprising silicon substrates, an SiGe buffer layer, and a Group III-V or II-VI active layer. The present invention also provides novel semiconductor structures comprising silicon substrates, an SiGe buffer layer, an SiGeSn template layer, and an SiGe, Ge, Group III-V, or Group II-VI active layer.








 
 
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