Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
GeSiSn-based compounds, templates, and semiconductor structures










Image Number 3 for United States Patent #8029905.

The present invention provides novel compounds of the formula Gei-x-ySixSny, wherein 0.01<y<0.11, and 0.26<x<0.35, and semiconductor structures comprising such compounds. The present invention also provides novel semiconductor structures comprising silicon substrates, an SiGe buffer layer, and a Group III-V or II-VI active layer. The present invention also provides novel semiconductor structures comprising silicon substrates, an SiGe buffer layer, an SiGeSn template layer, and an SiGe, Ge, Group III-V, or Group II-VI active layer.








 
 
  Recently Added Patents
Powder for layerwise manufacturing of objects
Method and apparatus for wireless communication in a mesh network with central control of communication relationships
Image processing apparatus and image processing method
Dyes and methods of marking biological material
Rechargeable battery
Single-wavelength correction method for luminescent homogeneous biological assay
Method of publicly displaying a person's relationship status
  Randomly Featured Patents
Techniques for statistics collection in connection with data storage performance
Row-column repair technique for semiconductor memory arrays
Multi-loop receiver coil having a large tuning range for a magnetic resonance imaging system
Audio reader device
Electronic micro-controller conversion module for step by step switching apparatus
Dynamic ultrasonic cleaning and disinfecting device and method
Nitrogen oxides reducing aftercooler for turbocharged engines
Wall attached tool rack
Pillow having a channel formed centrally therethrough
Clog resistant gutter-downspout connection unit