Resources Contact Us Home
Method of fabricating nitride-based compound layer, GaN substrate and vertical structure nitride-based semiconductor light emitting device

Image Number 4 for United States Patent #8026156.

In a method for fabricating a nitride-based compound layer, first, a GaN substrate is prepared. A mask layer with a predetermined pattern is formed on the GaN substrate to expose a partial area of the GaN substrate. Then a buffer layer is formed on the partially exposed GaN substrate. The buffer layer is made of a material having a 10% or less lattice mismatch with GaN. Thereafter, the nitride-based compound is grown laterally from a top surface of the buffer layer toward a top surface of the mask layer and the nitride-based compound layer is vertically grown to a predetermined thickness. Also, the mask layer and the buffer layer are removed via wet-etching to separate the nitride-based compound layer from the GaN substrate.

  Recently Added Patents
2,4-disubstituted pyrimidines useful as kinase inhibitors
Electronic devices with voice command and contextual data processing capabilities
Tracking data eye operating margin for steady state adaptation
Distributed mobile access point acquisition
Dynamic web page construction based on determination of client device location
Electromagnetic sensor cable and electrical configuration therefor
  Randomly Featured Patents
Reference plane of integrated circuit packages
Method of filling a contact hole in a semiconductor device using vertical growth of metal
Apparatus for coating running webs with flowable material
Method and assembly for masking
Shoulder implant assembly
Coding systems for elements of machine tools, particularly of the numerically controlled type
Make-break devices
Zoom lens and electronic imaging system using the same
Fan array fan section in air-handling systems
Replacement gate devices with barrier metal for simultaneous processing