Resources Contact Us Home
Method of fabricating nitride-based compound layer, GaN substrate and vertical structure nitride-based semiconductor light emitting device

Image Number 4 for United States Patent #8026156.

In a method for fabricating a nitride-based compound layer, first, a GaN substrate is prepared. A mask layer with a predetermined pattern is formed on the GaN substrate to expose a partial area of the GaN substrate. Then a buffer layer is formed on the partially exposed GaN substrate. The buffer layer is made of a material having a 10% or less lattice mismatch with GaN. Thereafter, the nitride-based compound is grown laterally from a top surface of the buffer layer toward a top surface of the mask layer and the nitride-based compound layer is vertically grown to a predetermined thickness. Also, the mask layer and the buffer layer are removed via wet-etching to separate the nitride-based compound layer from the GaN substrate.

  Recently Added Patents
Method and system for distributing load by redirecting traffic
Advertising system and method
Carrier for developing electrostatic charge image, developer for developing electrostatic charge image, image forming apparatus, and image forming method
Method and system for detecting target objects
System, method, and computer program product for determining whether an electronic mail message is compliant with an etiquette policy
Harmonic sensor
Light-emitting device package structure
  Randomly Featured Patents
Method for the preparation of citalopram
Oil distributor
Layering serial attached small computer system interface (SAS) over ethernet
Method for fabricating an air gap pipe
Telephone set
Pet exercise enclosure
Method for simple analysis of relative nucleic acid levels in multiple small samples by cytoplasmic dot hybridization
Steering apparatus
Front restraint device for shipping bins
Xanthene dyes