Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method of fabricating nitride-based compound layer, GaN substrate and vertical structure nitride-based semiconductor light emitting device










Image Number 4 for United States Patent #8026156.

In a method for fabricating a nitride-based compound layer, first, a GaN substrate is prepared. A mask layer with a predetermined pattern is formed on the GaN substrate to expose a partial area of the GaN substrate. Then a buffer layer is formed on the partially exposed GaN substrate. The buffer layer is made of a material having a 10% or less lattice mismatch with GaN. Thereafter, the nitride-based compound is grown laterally from a top surface of the buffer layer toward a top surface of the mask layer and the nitride-based compound layer is vertically grown to a predetermined thickness. Also, the mask layer and the buffer layer are removed via wet-etching to separate the nitride-based compound layer from the GaN substrate.








 
 
  Recently Added Patents
Haloalky -substituted amides as insecticides and acaricides
Method and system for routing telephony communications together with modified calling party identifier information
Solid-state imaging apparatus and imaging system
Distributive data capture
Functional component compensation reconfiguration system and method
Electronic component and reflected-wave cancelling method
Glove
  Randomly Featured Patents
Packing material for liquid chromatography and process for producing the same
Linear voltage-to-current converter
Composition for growth of diatom algae
Mobile network automatic tunnels
One-component polyurethane foam compositions and methods for their use
Integral electrical contact and method of making same
Process for activating polysaccharides, polysaccharides produced by this process, and use thereof
Thread plate process
Video contents recording apparatus and method of managing data storage medium included therein
Data transfer apparatus