Resources Contact Us Home
Method of fabricating nitride-based compound layer, GaN substrate and vertical structure nitride-based semiconductor light emitting device

Image Number 4 for United States Patent #8026156.

In a method for fabricating a nitride-based compound layer, first, a GaN substrate is prepared. A mask layer with a predetermined pattern is formed on the GaN substrate to expose a partial area of the GaN substrate. Then a buffer layer is formed on the partially exposed GaN substrate. The buffer layer is made of a material having a 10% or less lattice mismatch with GaN. Thereafter, the nitride-based compound is grown laterally from a top surface of the buffer layer toward a top surface of the mask layer and the nitride-based compound layer is vertically grown to a predetermined thickness. Also, the mask layer and the buffer layer are removed via wet-etching to separate the nitride-based compound layer from the GaN substrate.

  Recently Added Patents
Compositions, organisms, systems, and methods for expressing a gene product in plants using SCBV expression control sequences operable in monocots and dicots
Systems and methods for DC-to-DC converter control
Mobile communication method, mobile station, and network device
Polyfunctional sulfur-containing epoxies and compositions thereof
Semiconductor device having a triple gate transistor and method for manufacturing the same
System and method for investing public deposits
  Randomly Featured Patents
Deployable knee bolster for instrument panel
Portable transmitter having space for containing mechanical key
Solid-state imaging device
System and method for allowing nodes in a wireless communication network to access multiple channels
Face component replacement
Method and apparatus for triggering network device discovery
Linear position sensor using magnetic fields
Method for producing a green protective coating on copper
Lighting fixture
Cup holder