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Nonvolatile semiconductor memory device and method for manufacturing same

Image Number 11 for United States Patent #8017993.

A nonvolatile semiconductor memory device includes: a stacked body with a plurality of insulating films and electrode films alternately stacked therein, through which a through hole extending in the stacking direction is formed; a semiconductor pillar buried inside the through hole; and a charge storage layer located on both sides of each of the electrode films in the stacking direction and insulated from the electrode film and the semiconductor pillar.

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