Resources Contact Us Home
Semiconductor device and manufacturing method thereof

Image Number 12 for United States Patent #8013442.

In a semiconductor device according to the present invention, a plurality of opening regions 5 to 8 are formed in an insulating film on a pad electrode 3. A metal layer 9 formed on the pad electrode 3 has a plurality of concave portions 10 to 13 formed therein by covering the opening regions 5 to 8. Moreover, in a peripheral portion at a bottom of each of the concave portions 10 to 13 in the metal layer 9, the metal layer 9 and a Cu plating layer 19 react with each other. By use of this structure, the metal reaction area serves as a current path on the pad electrode 3. Thus, a resistance value on the pad electrode 3 is reduced.

  Recently Added Patents
Battery terminal with current sensor
Co-map communication operator
Detachably integrated battery charger for mobile cell phones and like devices
Vectorization of program code
Printing device, printing system, program, and printing method for printing based on print data from a user authorized to issue a print instruction for the print data
Calendar integration methods and systems for presentation of events having combined activity and location information
Switchgear and method for operating switchgear
  Randomly Featured Patents
Gas humidification apparatus
Position sensing device
Portable electronic device power manager with current Limit feedback control loop modification for stabilizing an external power supply
Tricyclic compounds, compositions, and methods useful in the treatment or prophylaxis of 5-HT.sub.6 receptor-related disorders
Surgical drape having adhesive margins
Liquid crystal display device and its drive method
Thermal management of electronic devices
Method for producing low-loss tunable ceramic composites with improved breakdown strengths
Shower holder
High throughput viscometer and method of using same