Resources Contact Us Home
Semiconductor device and manufacturing method thereof

Image Number 12 for United States Patent #8013442.

In a semiconductor device according to the present invention, a plurality of opening regions 5 to 8 are formed in an insulating film on a pad electrode 3. A metal layer 9 formed on the pad electrode 3 has a plurality of concave portions 10 to 13 formed therein by covering the opening regions 5 to 8. Moreover, in a peripheral portion at a bottom of each of the concave portions 10 to 13 in the metal layer 9, the metal layer 9 and a Cu plating layer 19 react with each other. By use of this structure, the metal reaction area serves as a current path on the pad electrode 3. Thus, a resistance value on the pad electrode 3 is reduced.

  Recently Added Patents
Techniques for distributing secure communication secrets
Electrifying roller
MEMS device
Musical wind instrument with inner waveguide reflector assembly
System and method for power amplifier over-voltage protection
Semiconductor devices and methods for manufacturing a semiconductor device
Outdoor table organizer assembly
  Randomly Featured Patents
System and method for assessing coupling between an electrode and tissue
Speaker apparatus
Image input unit and image input method
Hybrid on-load tap changer and a method of operating the same
Power distribution panel with modular elements
Nullification of malicious code by data file transformation
Moisture monitoring and control system
Organic electronic device and processes for forming and using the same
Light emitting diode