Resources Contact Us Home
Semiconductor device and manufacturing method thereof

Image Number 12 for United States Patent #8013442.

In a semiconductor device according to the present invention, a plurality of opening regions 5 to 8 are formed in an insulating film on a pad electrode 3. A metal layer 9 formed on the pad electrode 3 has a plurality of concave portions 10 to 13 formed therein by covering the opening regions 5 to 8. Moreover, in a peripheral portion at a bottom of each of the concave portions 10 to 13 in the metal layer 9, the metal layer 9 and a Cu plating layer 19 react with each other. By use of this structure, the metal reaction area serves as a current path on the pad electrode 3. Thus, a resistance value on the pad electrode 3 is reduced.

  Recently Added Patents
Image coding apparatus and image decoding apparatus
Systems and methods for restoring images
Food-grade flour from dry fractionated corn germ and collet composition and method for producing same
Adaptive take-off strips for smoothing ink consumption
Linerless labels
Optimization of packaging sizes
  Randomly Featured Patents
Power steering apparatus
Cleat stem holder
Drive mechanism for key operated electronic lock
Ring vortex depth charge
Low cost, easy to build precision wavelength locker
Process for production of polymer particles
System for sending signals between modules
Support bars for a treadmill
Evaporative emissions control device for a vehicle fuel system
Apparatus for aligning an inspection or repair device with a selected tube in a heat exchanger