Resources Contact Us Home
Semiconductor device and manufacturing method thereof

Image Number 12 for United States Patent #8013442.

In a semiconductor device according to the present invention, a plurality of opening regions 5 to 8 are formed in an insulating film on a pad electrode 3. A metal layer 9 formed on the pad electrode 3 has a plurality of concave portions 10 to 13 formed therein by covering the opening regions 5 to 8. Moreover, in a peripheral portion at a bottom of each of the concave portions 10 to 13 in the metal layer 9, the metal layer 9 and a Cu plating layer 19 react with each other. By use of this structure, the metal reaction area serves as a current path on the pad electrode 3. Thus, a resistance value on the pad electrode 3 is reduced.

  Recently Added Patents
Stopper, motor, and disk drive apparatus
Method for combining images and magnetic resonance scanner
Prevention and treatment of osteoarthritis
Battery grid
Light-emitting device package and method of manufacturing the same
  Randomly Featured Patents
Conductive thermoplastic compositions, methods of manufacture and articles derived from such compositions
Mustard seed remembrance symbol of faith
Air intake device for vehicle internal combustion engine
Process for producing acyclic nucleosides and process for separating purine nucleosides
Method and instrument for estimating condition of growing ovum
Synchronizing triggering of multiple hardware trace facilities using an existing system bus
Integrated circuit device and its control method
Rescue tool having spreader plates
Self pre-charging and equalizing bit line sense amplifier
Floating head probe