Resources Contact Us Home
Semiconductor device and manufacturing method thereof

Image Number 12 for United States Patent #8013442.

In a semiconductor device according to the present invention, a plurality of opening regions 5 to 8 are formed in an insulating film on a pad electrode 3. A metal layer 9 formed on the pad electrode 3 has a plurality of concave portions 10 to 13 formed therein by covering the opening regions 5 to 8. Moreover, in a peripheral portion at a bottom of each of the concave portions 10 to 13 in the metal layer 9, the metal layer 9 and a Cu plating layer 19 react with each other. By use of this structure, the metal reaction area serves as a current path on the pad electrode 3. Thus, a resistance value on the pad electrode 3 is reduced.

  Recently Added Patents
Electronic component mounting machine and operating instruction method for the same
Coding circuitry for difference-based data transformation
Heteroleptic iridium complexes as dopants
Opioid-nornicotine codrugs combinations for pain management
Maize variety inbred PH1CD7
Systems and methods for synchronizing and controlling multiple image sensors
  Randomly Featured Patents
Method and apparatus for mediation of security information, and a computer product
Semiconductor light emitting element and method for fabricating the same
Method and apparatus for minimally invasive placement of sensing and driver assemblies to improve hearing loss
Exterior lighting fixture
Glycol polyether-acrylic acid-amine reaction product for fuel and mineral oils
Field effect transistor and method for manufacturing the same
Process of making manganous sulphate solution with low level impurity of potassium for manufacture of electrolytic manganese dioxide
Electronic element module and electronic device using the same
Apparatus for implanting latent insecticide
Method for sequencing polynucleotides