Resources Contact Us Home
Semiconductor device and manufacturing method thereof

Image Number 12 for United States Patent #8013442.

In a semiconductor device according to the present invention, a plurality of opening regions 5 to 8 are formed in an insulating film on a pad electrode 3. A metal layer 9 formed on the pad electrode 3 has a plurality of concave portions 10 to 13 formed therein by covering the opening regions 5 to 8. Moreover, in a peripheral portion at a bottom of each of the concave portions 10 to 13 in the metal layer 9, the metal layer 9 and a Cu plating layer 19 react with each other. By use of this structure, the metal reaction area serves as a current path on the pad electrode 3. Thus, a resistance value on the pad electrode 3 is reduced.

  Recently Added Patents
Multi user MIMO detection utilizing averaged spatial whitening
Method and system for efficient DRX operation during handover in LTE
Process for filtering interferograms obtained from SAR images acquired on the same area
Method and system for blocking hazardous information
5-lipoxygenase-activating protein (FLAP) inhibitors
Method and device for reducing image color noise
  Randomly Featured Patents
Method of manufacture of liquid crystal display device having characteristics which differ locally
Ball bearing retainer
Printing colorimetric instruction method and printer
Pesticide sticker-extender comprising maleic anhydride, sulfuric acid, turpentine, butanol, and alkanolamines
Steering system for vehicle such as snowmobile
Electromagnetic switching device
Method and apparatus for sensor fault detection and compensation
Substituted cycloalkyl derivatives, process for the manufacture thereof and use thereof as medicament
Metal framing member
Sandal upper