Resources Contact Us Home
Semiconductor device and manufacturing method thereof

Image Number 12 for United States Patent #8013442.

In a semiconductor device according to the present invention, a plurality of opening regions 5 to 8 are formed in an insulating film on a pad electrode 3. A metal layer 9 formed on the pad electrode 3 has a plurality of concave portions 10 to 13 formed therein by covering the opening regions 5 to 8. Moreover, in a peripheral portion at a bottom of each of the concave portions 10 to 13 in the metal layer 9, the metal layer 9 and a Cu plating layer 19 react with each other. By use of this structure, the metal reaction area serves as a current path on the pad electrode 3. Thus, a resistance value on the pad electrode 3 is reduced.

  Recently Added Patents
Method and apparatus for encoding and decoding video based on first sub-pixel unit and second sub-pixel unit
Method and apparatus for storing email messages
Method and apparatus for re-routing calls in a packet network during failures
Liquid crystal display device with a control mechanism for eliminating images
System and method for determining a characterisitic of an object adjacent to a route
Power transmission control device for vehicle
Plural component proportioner
  Randomly Featured Patents
Scanning electron microscope
Method of welding flanged pipe sections and apparatus therefor
Baby shoe
Polyp or cell block collecting instrument
Pectate lyases
Group transfer living polymer grafted to an initiator support
Means and method of sensing temperature
Method and system for system debugging through a keyboard device driver
Personal notebook computer with an integrated trackball
Methods and entities using IPSec ESP to support security functionality for UDP-based traffic