Resources Contact Us Home
Semiconductor device and manufacturing method thereof

Image Number 12 for United States Patent #8013442.

In a semiconductor device according to the present invention, a plurality of opening regions 5 to 8 are formed in an insulating film on a pad electrode 3. A metal layer 9 formed on the pad electrode 3 has a plurality of concave portions 10 to 13 formed therein by covering the opening regions 5 to 8. Moreover, in a peripheral portion at a bottom of each of the concave portions 10 to 13 in the metal layer 9, the metal layer 9 and a Cu plating layer 19 react with each other. By use of this structure, the metal reaction area serves as a current path on the pad electrode 3. Thus, a resistance value on the pad electrode 3 is reduced.

  Recently Added Patents
Electrical terminal
Hybrid CMOS nanowire mesh device and PDSOI device
Magnetoresistive shield with coupled lateral magnet bias
System and method for converting biomass to ethanol via syngas
Fluorescent dyes, fluorescent dye kits, and methods of preparing labeled molecules
Creation and use of test cases for automated testing of media-based applications
Wound dressings
  Randomly Featured Patents
Apparatus for manufacturing hydro dynamic bearing device method
Tamper-evident cap assembly for a container
Method and apparatus for obtaining user interface information from executable program code
System for generating chip select signals based on coded and uncoded address signals
Method for slowing down dopant-enhanced diffusion in substrates and devices fabricated therefrom
Multi-service network switch with modem pool management
Method and means for fire-sealing a penetration for a conduit
Protected recording medium
Transport apparatus for large network telecommunication equipment
Toy bubble blower