Resources Contact Us Home
Nitride semiconductor device and method for fabricating the same

Image Number 3 for United States Patent #8013320.

A nitride semiconductor device includes a semiconductor stacked structure which is formed of a nitride semiconductor having a first principal surface and a second principal surface opposed to the first principal surface and which includes an active layer. The first principal surface of the semiconductor stacked structure is formed with a plurality of indentations whose plane orientations are the {0001} plane, and the plane orientation of the second principal surface is the {1-101} plane. The active layer is formed along the {1-101} plane.

  Recently Added Patents
Block copolymer nanoparticle compositions
Management of memory array with magnetic random access memory (MRAM)
Methods for increasing efficacy of FOLR1 cancer therapy
Bisphosphonate compounds
Email certificates
Method for increasing expression of active tumor necrosis factor receptor family member-Ig fusion proteins
Communication system, authentication device, control server, communication method, and program
  Randomly Featured Patents
Compact multi frequency-range impedance tuner
Twisted necklace/bracelet
Optical fibre cable and method of making same
Plastic container
DCT transmission utilizing a two axis chain
Asphalt surface renewal method and apparatus
Glass fiber sizing compositions, sized glass fibers and methods of reinforcing polymeric materials using the same
Electronic device with switch control unit
Verification device of semiconductor integrated circuit, verification method of semiconductor integrated circuit, and computer readable medium storing verification program of semiconductor int
Semiconductor laser array device