Resources Contact Us Home
Nitride semiconductor device and method for fabricating the same

Image Number 3 for United States Patent #8013320.

A nitride semiconductor device includes a semiconductor stacked structure which is formed of a nitride semiconductor having a first principal surface and a second principal surface opposed to the first principal surface and which includes an active layer. The first principal surface of the semiconductor stacked structure is formed with a plurality of indentations whose plane orientations are the {0001} plane, and the plane orientation of the second principal surface is the {1-101} plane. The active layer is formed along the {1-101} plane.

  Recently Added Patents
Systems and methods for providing improved power performance in wireless communication systems
Tomographic image generating apparatus and tomographic image generating method
RF safe transformer-coupled transmission line for MRI with reduced artifacts
Handheld electronic device including multi-compartment shielding container and associated methods
Pressure assisted variable flow clean throat aerial retardant delivery system
Inventory and patient management system
Image processing apparatus and method and program
  Randomly Featured Patents
Hydraulic control system for a tree felling unit
Method for constructing three-dimensional polyhedron model
Self-start circuits for low-power clock oscillators
Diagnostic system and method for hydraulically-actuated cam phasers
Hologram recording medium and recording and reproducing system
Portable terminal apparatus and display control program thereof
Fuel combustion method and reactor
Error correction coding over multiple memory pages
Optical transmission system constructing method and system
Polymers containing hexagonal boron nitride particles coated with turbostratic carbon and process for preparing same