Resources Contact Us Home
Nitride semiconductor device and method for fabricating the same

Image Number 3 for United States Patent #8013320.

A nitride semiconductor device includes a semiconductor stacked structure which is formed of a nitride semiconductor having a first principal surface and a second principal surface opposed to the first principal surface and which includes an active layer. The first principal surface of the semiconductor stacked structure is formed with a plurality of indentations whose plane orientations are the {0001} plane, and the plane orientation of the second principal surface is the {1-101} plane. The active layer is formed along the {1-101} plane.

  Recently Added Patents
Steering lock driving circuit and steering lock device
Plants and seeds of hybrid corn variety CH817100
Method for eliciting an immune response to human telomerase reverse transcriptase
Reliable event broadcaster with multiplexing and bandwidth control functions
Electronic device
RF power amplifier circuit with mismatch tolerance
Method and system for providing complete internet anywhere with partial server processing
  Randomly Featured Patents
Process for producing degummed vegetable oils and gums of high phosphatidic acid content
System and method for hierarchical device extraction
Method and system for determining hard and preferred rules in global routing of electronic designs
Apparatus and method for aggregating disparate storage on consumer electronics devices
Auto-measurement and calibration of DC resistance in current sensing applications
Portable game machine
Copper interconnect systems which use conductive, metal-based cap layers
PAR lamp with short arc HID bulb and cut-out in aluminum to prevent arcing
MESFET Using a shallow junction gate structure on GaInAs
Liquid/supercritical carbon dioxide/dry cleaning system