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Semiconductor device and method of fabricating the same










Image Number 2 for United States Patent #8012833.

A method for fabricating a semiconductor device includes forming an insulating pattern over a semiconductor substrate. An epitaxial growth layer is formed over the semiconductor substrate exposed by the insulating pattern to fill the insulating pattern with the epitaxial growth layer. A recess gate having a recess channel is formed. The recess channel is disposed between two neighboring insulating patterns.








 
 
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