Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Single poly CMOS imager










Image Number 5 for United States Patent #8003506.

More complete charge transfer is achieved in a CMOS or CCD imager by reducing the spacing in the gaps between gates in each pixel cell, and/or by providing a lightly doped region between adjacent gates in each pixel cell, and particularly at least between the charge collecting gate and the gate downstream to the charge collecting gate. To reduce the gaps between gates, an insulator cap with spacers on its sidewalls is formed for each gate over a conductive layer. The gates are then etched from the conductive layer using the insulator caps and spacers as hard masks, enabling the gates to be formed significantly closer together than previously possible, which, in turn increases charge transfer efficiency. By providing a lightly doped region on between adjacent gates, a more complete charge transfer is effected from the charge collecting gate.








 
 
  Recently Added Patents
Method and system for filtering noises in an image scanned by charged particles
Communication apparatus and communication system
System and method for terminating communication sessions with roaming mobile devices
3D solid-state arrangement for solid state memory
Satellite communication network
Human and mouse targeting peptides identified by phage display
Wrench
  Randomly Featured Patents
Method and apparatus for no-till planting
Method and system for providing runtime vulnerability defense for cross domain interactions
Process for the preparation of vinylcyclopropane derivatives
Single pin coaxial initiator, retainer and connector and method of operation
Bicycle component positioning device
Two-sheet self-mailer
Internal combustion engine misfire detector
System and method for transferring data using variance based messaging
Microfluidic chemostat
Melamine-formaldehyde/styrene-acrylate paint detackification composition