Resources Contact Us Home
Single poly CMOS imager

Image Number 5 for United States Patent #8003506.

More complete charge transfer is achieved in a CMOS or CCD imager by reducing the spacing in the gaps between gates in each pixel cell, and/or by providing a lightly doped region between adjacent gates in each pixel cell, and particularly at least between the charge collecting gate and the gate downstream to the charge collecting gate. To reduce the gaps between gates, an insulator cap with spacers on its sidewalls is formed for each gate over a conductive layer. The gates are then etched from the conductive layer using the insulator caps and spacers as hard masks, enabling the gates to be formed significantly closer together than previously possible, which, in turn increases charge transfer efficiency. By providing a lightly doped region on between adjacent gates, a more complete charge transfer is effected from the charge collecting gate.

  Recently Added Patents
Prevention and treatment of oxidative stress disorders by gluthathione and phase II detoxification enzymes
Blue box
Liquid crystal display
High productivity single pass scanning system
Digital photographing apparatus
Method and device for managing subscriber connection
Power device and method of packaging same
  Randomly Featured Patents
Ventilation-characteristic measuring apparatus
Envelope moistener
Folding knife
Fish bait composition
Tread for footwear or the like
Restricting silica content of catalyst inventory to prevent alumina poisoning for SO.sub.x control
Uniform emitter array for display devices
White light emitting diode
Method of and circuit arrangement for supplying interrupt request signals
Electronic system for detecting a fault