Resources Contact Us Home
Single poly CMOS imager

Image Number 5 for United States Patent #8003506.

More complete charge transfer is achieved in a CMOS or CCD imager by reducing the spacing in the gaps between gates in each pixel cell, and/or by providing a lightly doped region between adjacent gates in each pixel cell, and particularly at least between the charge collecting gate and the gate downstream to the charge collecting gate. To reduce the gaps between gates, an insulator cap with spacers on its sidewalls is formed for each gate over a conductive layer. The gates are then etched from the conductive layer using the insulator caps and spacers as hard masks, enabling the gates to be formed significantly closer together than previously possible, which, in turn increases charge transfer efficiency. By providing a lightly doped region on between adjacent gates, a more complete charge transfer is effected from the charge collecting gate.

  Recently Added Patents
Molten alloy solidification analyzing method and solidification analyzing program for performing the same
Perfume bottle
Method for repairing or replacing damaged tissue
Medical imaging probe with rotary encoder
Methods of saccharification of polysaccharides in plants
Interface circuit
Piperazinedione compounds
  Randomly Featured Patents
Remote control unit
Reclining ride down child seat
Method of making protected changes to data stored in a database, as well as database system and network element equipped therewith
Motor Vehicle lid or door lock
Methods and compositions for full-length cDNA Cloning using a template-switching oligonucleotide
Method for isotope-selective vibrational excitation of a gaseous compound of an isotope using multiple wavelengths
Hydraulic crane-mounted remotely-controlled lifting device
Portable electric blower
Safe door
Method and system for verifying connectivity of multi-segment pseudo-wires