Resources Contact Us Home
Semiconductor device and fabrication method thereof

Image Number 3 for United States Patent #7993970.

A semiconductor device and a method of manufacturing the same are disclosed. The method is carried out by forming solder pads on a substrate by wet etching, flipping a semiconductor chip having a plurality of connection bumps formed on an active surface of the semiconductor chip for the connection bumps to be mounted by compression on the solder pads of the substrate correspondingly, at a temperature of the compression between the connection bumps and the solder pads lower than the melting points of the solder pads and the connection bumps, so as to allow the semiconductor chip to be engaged with and electrically connected to the substrate through the connection bumps and the solder pads, thereby enhancing the bonding strength of the solder pads and the connection bumps and increasing the fabrication reliability.

  Recently Added Patents
Systems and methods for archiving and retrieving navigation points in a voice command platform
Configuration and incentive in event management environment providing an automated segmentation of consideration
Image forming apparatus and method of translating virtual memory address into physical memory address
Method of preparing MgB.sub.2 superconducting wire and the MgB.sub.2 superconducting wire prepared thereby
Processor and data transfer method
Preserving user applied markings made to a hardcopy original document
Document-related representative information
  Randomly Featured Patents
Venting reclosable bags
Shared television sessions
Polyamide supported metallocene catalysts
Semiconductor integrated circuit
Gaseous-based radiation detector
Device for SCSI expansion
Aircraft pneumatic tire having cap tread layer and base tread layer
Method and apparatus for effecting dorsal vein ligation and tubular anastomosis and laparoscopic prostatectomy
Method for fabricating PLDs including multiple discrete devices formed on a single chip
Showerhead adaptor means