Resources Contact Us Home
Fusion bonding process and structure for fabricating silicon-on-insulation (SOI) semiconductor devices

Image Number 4 for United States Patent #7989894.

A method of fabricating a semiconductor-on-insulator device including: providing a first semiconductor wafer having an about 500 angstrom thick oxide layer thereover; etching the first semiconductor wafer to raise a pattern therein; doping the raised pattern of the first semiconductor wafer through the about 500 angstrom thick oxide layer; providing a second semiconductor wafer having an oxide thereover; and, bonding the first semiconductor wafer oxide to the second semiconductor wafer oxide at an elevated temperature.

  Recently Added Patents
Control device of hybrid vehicle
LED driving circuit, LED illumination appliance, LED illuminator, and LED illumination system
Vanilloid receptor ligands and use thereof for the production of pharmaceutical preparations
Apparatus and method for storing event information for an HVAC system
Audio signal clip detection
Display panel and gate driving circuit and driving method for gate driving circuit
Electrode material and use thereof for production of electrochemical cells
  Randomly Featured Patents
Handset telephone
Ink blocking member in rotary stencil printing machine and printing drum having the same
Headlamp for a bicycle
Press-Contact electrical interconnectors and method for producing the same
Gauging assembly
Polymers useful as printing vehicles
Equalizer for suspension system
Cable entry device for wiring boxes
Etchback process for tungsten utilizing a NF3/AR chemistry