Resources Contact Us Home
Fusion bonding process and structure for fabricating silicon-on-insulation (SOI) semiconductor devices

Image Number 4 for United States Patent #7989894.

A method of fabricating a semiconductor-on-insulator device including: providing a first semiconductor wafer having an about 500 angstrom thick oxide layer thereover; etching the first semiconductor wafer to raise a pattern therein; doping the raised pattern of the first semiconductor wafer through the about 500 angstrom thick oxide layer; providing a second semiconductor wafer having an oxide thereover; and, bonding the first semiconductor wafer oxide to the second semiconductor wafer oxide at an elevated temperature.

  Recently Added Patents
Managing distributed applications using structural diagrams
Support for a portable electronic device
Process for preparing red cocoa ingredients, red chocolate, and food products
Dynamic learning method and adaptive normal behavior profile (NBP) architecture for providing fast protection of enterprise applications
Petunia plant named `Bartpet001`
Probe for ultrasound diagnostic apparatus
  Randomly Featured Patents
Method of manufacturing piezoelectric device using direct bonded quartz plate
Selection system for an automatic motor vehicle transmission
Method and apparatus using insertably-removable auxiliary devices to play games over a communications link
System and method for managing storage space of a cache
Mixer having means for periodically mechanically striking liquid-containing tubes to induce motion of the tubes
Accurate wire load model
Method for producing a high softening point aliphatic petroleum resin
Footwear or other products
Device to reduce clogging of gutters
Traveling equipment for cleaner