Resources Contact Us Home
Fusion bonding process and structure for fabricating silicon-on-insulation (SOI) semiconductor devices

Image Number 4 for United States Patent #7989894.

A method of fabricating a semiconductor-on-insulator device including: providing a first semiconductor wafer having an about 500 angstrom thick oxide layer thereover; etching the first semiconductor wafer to raise a pattern therein; doping the raised pattern of the first semiconductor wafer through the about 500 angstrom thick oxide layer; providing a second semiconductor wafer having an oxide thereover; and, bonding the first semiconductor wafer oxide to the second semiconductor wafer oxide at an elevated temperature.

  Recently Added Patents
Hemostatic devices and methods of making same
Memory device and self interleaving method thereof
Digital photographing apparatus, method of controlling the same, and recording medium for the method
Manufactured product configuration
Block copolymer nanoparticle compositions
Method for manufacturing photoelectric conversion device
Light irradiation element, image forming structure, and image forming apparatus
  Randomly Featured Patents
Feed pump
Vehicle headlight
Reversing panel stores carrier
Method, and system for a re-configurable optical multiplexer, demultiplexer and optical add-drop multiplexer
Trigger sprayer
Display and packaging device for a flashlight
Motor-driven supercharger
Method of and arrangement for formatting a magnetizable medium
Seed meter with flexible seed disc