Resources Contact Us Home
Fusion bonding process and structure for fabricating silicon-on-insulation (SOI) semiconductor devices

Image Number 4 for United States Patent #7989894.

A method of fabricating a semiconductor-on-insulator device including: providing a first semiconductor wafer having an about 500 angstrom thick oxide layer thereover; etching the first semiconductor wafer to raise a pattern therein; doping the raised pattern of the first semiconductor wafer through the about 500 angstrom thick oxide layer; providing a second semiconductor wafer having an oxide thereover; and, bonding the first semiconductor wafer oxide to the second semiconductor wafer oxide at an elevated temperature.

  Recently Added Patents
Systems and methods for analyzing telecommunications invoices for payment
Humidity indicator and method for fabricating the same
Laser processing a multi-device panel
Semiconductor memory device
Power converter and method of power conversion
Asynchronous distributed de-duplication for replicated content addressable storage clusters
System of providing an internet web site that assists medical professionals draft a letter of medical necessity or other documentation for transmission to a third party payer on behalf of a pa
  Randomly Featured Patents
Kits and processes for removing contaminants from nucleic acids in environmental and biological samples
Method for generating a quality oriented significance map for assessing the quality of an image or video
Projection mask as well as a method and apparatus for the embedding thereof and projection printing system
Brush holder device
Method for testing coagulation of blood through bioactive porous partition members
Quick release bimini hinge
Magnetoresistive element and the use thereof as storage element in a storage cell array
Sealing component for connector waterproofing
Method for delivering wills and messages
Method for producing a molded article with a laminated structure