Resources Contact Us Home
Fusion bonding process and structure for fabricating silicon-on-insulation (SOI) semiconductor devices

Image Number 4 for United States Patent #7989894.

A method of fabricating a semiconductor-on-insulator device including: providing a first semiconductor wafer having an about 500 angstrom thick oxide layer thereover; etching the first semiconductor wafer to raise a pattern therein; doping the raised pattern of the first semiconductor wafer through the about 500 angstrom thick oxide layer; providing a second semiconductor wafer having an oxide thereover; and, bonding the first semiconductor wafer oxide to the second semiconductor wafer oxide at an elevated temperature.

  Recently Added Patents
Method and system for acquiring support capability of mobile terminal by base station side system
Method and system for reduction of quantization-induced block-discontinuities and general purpose audio codec
Electronic device, information processing method, and storage medium
Mobile communication terminal provided with handsfree function and controlling method thereof
Verifiable service policy implementation for intermediate networking devices
Identification of protected content in e-mail messages
  Randomly Featured Patents
Mobile phone
Branch prediction system for superscalar processor
Portable computer having improved latch mechanism
Apparatus for generating programmable interrupts to indicate display positions in a computer
Rear projection television
Data streaming mechanism in a microprocessor
Tripod structure
Power relay module
Apparatus for utilizing a discrete fourier transformer to implement a discrete cosine transformer
Primer feed device