Resources Contact Us Home
Fusion bonding process and structure for fabricating silicon-on-insulation (SOI) semiconductor devices

Image Number 4 for United States Patent #7989894.

A method of fabricating a semiconductor-on-insulator device including: providing a first semiconductor wafer having an about 500 angstrom thick oxide layer thereover; etching the first semiconductor wafer to raise a pattern therein; doping the raised pattern of the first semiconductor wafer through the about 500 angstrom thick oxide layer; providing a second semiconductor wafer having an oxide thereover; and, bonding the first semiconductor wafer oxide to the second semiconductor wafer oxide at an elevated temperature.

  Recently Added Patents
Lubricating oil with enhanced protection against wear and corrosion
Reuse of static image data from prior image frames to reduce rasterization requirements
Tomlinson Harashima precoding with additional receiver processing in a multi-user multiple-input multiple-output wireless transmission system
Gaze tracking password input method and device utilizing the same
Systems of an electronic device and methods for manufacturing the same
Multiple secure elements in mobile electronic device with near field communication capability
Liquid crystal display device
  Randomly Featured Patents
Frustrated total internal reflection acoustic field sensor
Handheld communicator
Blasting method and apparatus
Synthetic aperture radar focusing
Torque isolation device
Controlling traffic congestion
Female stimulator comprising close-fitting clitoral suction chamber
Method for selectively stressing MOSFETs to improve charge carrier mobility
Sheet feeder and transfer apparatus