Resources Contact Us Home
Fusion bonding process and structure for fabricating silicon-on-insulation (SOI) semiconductor devices

Image Number 4 for United States Patent #7989894.

A method of fabricating a semiconductor-on-insulator device including: providing a first semiconductor wafer having an about 500 angstrom thick oxide layer thereover; etching the first semiconductor wafer to raise a pattern therein; doping the raised pattern of the first semiconductor wafer through the about 500 angstrom thick oxide layer; providing a second semiconductor wafer having an oxide thereover; and, bonding the first semiconductor wafer oxide to the second semiconductor wafer oxide at an elevated temperature.

  Recently Added Patents
Methods and systems for adapting a user environment
Boring machine
LED driving circuit, LED illumination appliance, LED illuminator, and LED illumination system
Preparation and use of meristematic cells belonging to the Dendrobium phalaenopsis, Ansellia, Polyrrhiza, Vanilla, Cattleya and Vanda genera with high content of phenylpropanoids, hydrosoluble
Interconnect, bus system with interconnect and bus system operating method
Continuous geospatial tracking system and method
  Randomly Featured Patents
Method and apparatus video data management
On-screen displaying apparatus having zoom function
Slide fastener with continuous coupling elements
Device for preventing access to ladders
High output stationary X-ray target with flexible support structure
Level shifting circuit
Petroleum production method
Auto-recording tool for developing test harness files
Method and apparatus for organizing and playing data
Block splitting assembly and method