Resources Contact Us Home
Fusion bonding process and structure for fabricating silicon-on-insulation (SOI) semiconductor devices

Image Number 4 for United States Patent #7989894.

A method of fabricating a semiconductor-on-insulator device including: providing a first semiconductor wafer having an about 500 angstrom thick oxide layer thereover; etching the first semiconductor wafer to raise a pattern therein; doping the raised pattern of the first semiconductor wafer through the about 500 angstrom thick oxide layer; providing a second semiconductor wafer having an oxide thereover; and, bonding the first semiconductor wafer oxide to the second semiconductor wafer oxide at an elevated temperature.

  Recently Added Patents
Methods, apparatus, and systems for facilitating control communications between disparate devices
Methods and apparatus for ultrasonic cleaning
Data processor with virtual machine management
Blueberry plant named `DrisBlueFour`
Soft co-processors to provide a software service function off-load architecture in a multi-core processing environment
Representing polarized light in computer models
Carbon blacks having low PAH amounts and methods of making same
  Randomly Featured Patents
Method of manufacturing 12 to 14% Mn steel components with weldable end pieces
Alignment of pagewidth bars
Enhanced efficiency laterally-coupled distributed feedback laser
Imaging system and method applying transformer lens and digital image reconstruction
System and method for optimizing interrupt processing in virtualized environments
Buckle for maintaining tension in a serpentine article
Method and system of throttle control calibration
System for measuring engine exhaust constituents
Wiring structure and method for manufacturing the same
Cutting machine for elongate workpieces