Resources Contact Us Home
Methods of forming insulation layer patterns and methods of manufacturing semiconductor devices including insulation layer patterns

Image Number 5 for United States Patent #7989335.

In a method of forming an insulation layer pattern, an insulation layer is formed on a substrate. An organic layer and a hard mask layer are successively formed on the insulation layer. A preliminary hard mask pattern having first openings is formed by patterning the hard mask layer. A hard mask pattern having the first openings and second openings is formed by patterning the preliminary hard mask pattern. Width control spacers are formed on sidewalls of the first and the second openings. An etching mask pattern is formed by etching the organic layer using the hard mask pattern as an etching mask. The insulation layer pattern having third openings is formed by etching the insulation layer using the etching mask pattern as an etching mask.

  Recently Added Patents
Systems and methods for classifying electronic information using advanced active learning techniques
Authentication service
Power surface mount light emitting die package
Configurable pitch reducing optical fiber array
Selective thermal treatment of medical instrument portions with thermal treatment system instrument holder
Card reader device
Contact detection between a disk and magnetic head
  Randomly Featured Patents
Apparatus and method for affecting physical parameter associated with a shaft
Integrated circuit structures including epitaxial silicon layers that extend from an active region through an insulation layer to a substrate
Method and device for assembling forward error correction frames in multimedia streaming
Upright rear wall extension for refrigerator shelves
Radio communication apparatus
Method and apparatus providing a graphical user interface for representing and navigating hierarchical networks
Wood trolley
Envelope flap folding device
Watering can