Resources Contact Us Home
Methods of forming insulation layer patterns and methods of manufacturing semiconductor devices including insulation layer patterns

Image Number 5 for United States Patent #7989335.

In a method of forming an insulation layer pattern, an insulation layer is formed on a substrate. An organic layer and a hard mask layer are successively formed on the insulation layer. A preliminary hard mask pattern having first openings is formed by patterning the hard mask layer. A hard mask pattern having the first openings and second openings is formed by patterning the preliminary hard mask pattern. Width control spacers are formed on sidewalls of the first and the second openings. An etching mask pattern is formed by etching the organic layer using the hard mask pattern as an etching mask. The insulation layer pattern having third openings is formed by etching the insulation layer using the etching mask pattern as an etching mask.

  Recently Added Patents
Process to extract quassinoids
Interferer region identification using image processing
Dual work function recessed access device and methods of forming
Leg mounted portable computer
Critical word forwarding with adaptive prediction
Managing job execution
Coated article and method for making the same
  Randomly Featured Patents
Auditing of wireless network node databases
Single pot process for producing (Z)-azabicyclo oxime ethers
Catechol derivatives, and preventive and remedial preparations for regressive disorders in the central nervous system containing the same
Bearing locking mechanism, work support
Inbred maize line PH5FW
Carnation plant named CFPC SABRE
Equaliser circuit
Holder for beverage container
Cellular communication network and its communication method
Process for increasing molecular weight of a polymer