Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method for manufacturing dual gate in semiconductor device










Image Number 2 for United States Patent #7989281.

Provided is a method for manufacturing a dual gate in a semiconductor device. The method includes forming a gate insulating layer and a gate conductive layer on a semiconductor substrate, forming a diffusion barrier layer on the gate conductive layer, forming a barrier metal layer on the diffusion barrier layer, depositing a first gate metal layer on the barrier metal layer, forming a metal nitride barrier layer on a surface of the first gate metal layer by supplying nitrogen (N2) plasma on the first gate metal layer, forming a second gate metal layer on the metal nitride barrier layer, and forming a hard mask layer on the second gate metal layer.








 
 
  Recently Added Patents
Rupture resistant system
Candle holder
System and method of automatic piloting for in-flight refuelling of aircraft, and aircraft comprising said system
Liquid crystal display device
Handheld electronic device with text disambiguation employing advanced editing feature
Light modulators and optical apparatuses including the same
Portion of a display panel with an ambiguous facial expression icon
  Randomly Featured Patents
Double-swirl spraying nozzle and method of spraying
Microbiological detection method for felts using iodonitrotetrazolium
Methods and systems for collecting responses
Organic compounds and their uses
Process for recovering barite from drilling muds
Container and blank for forming same
Microwave plane antenna
Display device and method of manufacturing the same
Characterizing thermomechanical properties of an organic substrate using three-dimensional finite element analysis
Evaporative cooler cabinet