Resources Contact Us Home
Method for manufacturing dual gate in semiconductor device

Image Number 2 for United States Patent #7989281.

Provided is a method for manufacturing a dual gate in a semiconductor device. The method includes forming a gate insulating layer and a gate conductive layer on a semiconductor substrate, forming a diffusion barrier layer on the gate conductive layer, forming a barrier metal layer on the diffusion barrier layer, depositing a first gate metal layer on the barrier metal layer, forming a metal nitride barrier layer on a surface of the first gate metal layer by supplying nitrogen (N2) plasma on the first gate metal layer, forming a second gate metal layer on the metal nitride barrier layer, and forming a hard mask layer on the second gate metal layer.

  Recently Added Patents
Image forming apparatus
System and method for providing program recommendations through multimedia searching based on established viewer preferences
Methods of synthesizing heteromultimeric polypeptides in yeast using a haploid mating strategy
Method and apparatus to maintain welding current to compensate for deterioration of welding contact tip
Semiconductor device and method of manufacturing the same
Vehicle and method for controlling vehicle
Efficiently emulating computer architecture condition code settings without executing branch instructions
  Randomly Featured Patents
Microphone assembly
DC frequency modulation circuit using two phase locked loops
Highly porous mullite particulate filter substrate
Orbital engine
Multimedia mini-speaker
Sputtering film forming method, electronic device manufacturing method, and sputtering system
Apparatus for measuring thin film refractive index and thickness with a spectrophotometer
Method for producing paraxylene comprising an adsortion step and two isomerization steps
Wireless internet product system
Method and apparatus for producing nitrogen