Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method for manufacturing dual gate in semiconductor device










Image Number 2 for United States Patent #7989281.

Provided is a method for manufacturing a dual gate in a semiconductor device. The method includes forming a gate insulating layer and a gate conductive layer on a semiconductor substrate, forming a diffusion barrier layer on the gate conductive layer, forming a barrier metal layer on the diffusion barrier layer, depositing a first gate metal layer on the barrier metal layer, forming a metal nitride barrier layer on a surface of the first gate metal layer by supplying nitrogen (N2) plasma on the first gate metal layer, forming a second gate metal layer on the metal nitride barrier layer, and forming a hard mask layer on the second gate metal layer.








 
 
  Recently Added Patents
Efficiently emulating computer architecture condition code settings without executing branch instructions
System and method for text input with a multi-touch screen
System and method for operating an electric power converter
Candle holder
Securing information by hiding identity on a computing device
Digital microwave radio link with adaptive data rate
Preserving user applied markings made to a hardcopy original document
  Randomly Featured Patents
Protective case for information storage disc
Shoelace tying device
Bidirectional E.C. motor and method of operating the motor
Power drill attachment and method for using the attachment
Wind-powered, battery-energized electric vehicle
Compression bone staple, apparatus and method
Speaker diaphragm and method of preparation of the same
Method of reworking structures incorporating low-k dielectric materials
Process for dyeing wool-containing fibre materials with anionic dyes in the presence of a wool protective agent
Shelf bin retaining wall