Resources Contact Us Home
Method for manufacturing dual gate in semiconductor device

Image Number 2 for United States Patent #7989281.

Provided is a method for manufacturing a dual gate in a semiconductor device. The method includes forming a gate insulating layer and a gate conductive layer on a semiconductor substrate, forming a diffusion barrier layer on the gate conductive layer, forming a barrier metal layer on the diffusion barrier layer, depositing a first gate metal layer on the barrier metal layer, forming a metal nitride barrier layer on a surface of the first gate metal layer by supplying nitrogen (N2) plasma on the first gate metal layer, forming a second gate metal layer on the metal nitride barrier layer, and forming a hard mask layer on the second gate metal layer.

  Recently Added Patents
Fluid handling structure, a lithographic apparatus and a device manufacturing method
Cordless hand blender
Lateral double diffused metal oxide semiconductor device and method of manufacturing the same
Co-map communication operator
Method for drug screening and characterization by calcium flux
Method for combining images and magnetic resonance scanner
Profiling activity through video surveillance
  Randomly Featured Patents
Isoxazole-containing thiourea inhibitors useful for treatment of varicella zoster virus
Method for production of vitamin C and or 2-Keto-L gulonic acid
Flow cell for a flow cytometer system
Herbicidal sulfonamides
Endoscopic suturing device
Cable constraining device for reduced cable wear
Vacuum cleaner
Permutation lock for containers such as suitcases
Visual teaching aid for number concept
Process for preparing epoxides