Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method for manufacturing dual gate in semiconductor device










Image Number 2 for United States Patent #7989281.

Provided is a method for manufacturing a dual gate in a semiconductor device. The method includes forming a gate insulating layer and a gate conductive layer on a semiconductor substrate, forming a diffusion barrier layer on the gate conductive layer, forming a barrier metal layer on the diffusion barrier layer, depositing a first gate metal layer on the barrier metal layer, forming a metal nitride barrier layer on a surface of the first gate metal layer by supplying nitrogen (N2) plasma on the first gate metal layer, forming a second gate metal layer on the metal nitride barrier layer, and forming a hard mask layer on the second gate metal layer.








 
 
  Recently Added Patents
Method and system for dynamic storage tiering using allocate-on-write snapshots
Thermosensitive recording medium
Image-capturing device and projection automatic calibration method of projection device
MOS transistor having combined-source structure with low power consumption and method for fabricating the same
Fire detector
Bend resistant cable
System and method for enabling image recognition and searching of remote content on display
  Randomly Featured Patents
Cosmetic composition
Piano action keyboard with roller and elastic diaphragm transducer
Amphiphilic multi-arm copolymers and nanomaterials derived therefrom
Blow molding apparatus
Interactive educational toy
Inverse characteristic measuring apparatus, distortion compensation apparatus, method, program, and recording medium
Process for the preparation of nitroanilines
4-(2-Substituted phenyl)-1,4-dihydropyridine-3,5-dicarboxylic acid esters active on blood circulation
Method of producing polyurethane injection molded in-line skate wheels
Expansion dowel assembly