Resources Contact Us Home
Method for manufacturing dual gate in semiconductor device

Image Number 2 for United States Patent #7989281.

Provided is a method for manufacturing a dual gate in a semiconductor device. The method includes forming a gate insulating layer and a gate conductive layer on a semiconductor substrate, forming a diffusion barrier layer on the gate conductive layer, forming a barrier metal layer on the diffusion barrier layer, depositing a first gate metal layer on the barrier metal layer, forming a metal nitride barrier layer on a surface of the first gate metal layer by supplying nitrogen (N2) plasma on the first gate metal layer, forming a second gate metal layer on the metal nitride barrier layer, and forming a hard mask layer on the second gate metal layer.

  Recently Added Patents
Pharmaceutical and diagnostic compositions for use in the treatment and diagnosis of neurodegenerative diseases or amyloid diseases
Air-fuel ratio control apparatus for an internal combustion engine
MOS device for eliminating floating body effects and self-heating effects
Methods for enhancing tantalum filament life in hot wire chemical vapor deposition processes
Fuse part in semiconductor device and method for forming the same
Capacity and coverage self-optimization method and device in a mobile network
High productivity single pass scanning system
  Randomly Featured Patents
Dry etching apparatus and dry etching method
Isosorbide derivatives
Modular luminaire assembly
Protective cover for a firearm
System and method for creating different field oxide profiles in a locos process
Platinum silicide infrared diode
Equipment for a funfair
Circuit for charging battery at higher potential
Profiled guide rail
Sign construction