Resources Contact Us Home
Composition for forming insulating film and method for fabricating semiconductor device

Image Number 9 for United States Patent #7985700.

A method for fabricating a semiconductor device utilizing the step of forming a first insulating film of a porous material over a substrate; the step of forming on the first insulating film a second insulating film containing a silicon compound containing Si--CH.sub.3 bonds by 30-90%, and the step of irradiating UV radiation with the second insulating film formed on the first insulating film to cure the first insulating film. Thus, UV radiation having the wavelength which eliminates CH.sub.3 groups is sufficiently absorbed by the second insulating film, whereby the first insulating film is highly strengthened with priority by the UV cure, and the first insulating film can have the film density increased without having the dielectric constant increased.

  Recently Added Patents
Image capturing device and automatic backlash correction method thereof
Single step flight schedule optimization
Resin composition for encapsulation and semiconductor unit encapsulated with resin
Posterior spinal implant system
Gas venting system
Toll-like receptor modulators and uses thereof
Copyright detection and protection system and method
  Randomly Featured Patents
Electromagnetic fuel pump
Ceiling fan light kit
Shrouded valve for internal combustion engine
Mobile refuse bin
Moisture detector
Polyphosphazene copolymers containing tetraalkyl orthosilicate substituents and a process therefore
Patent data mining method and apparatus
Method for managing transmission resources in a cellular communications network, corresponding terminal, base station and computer program product
Receiver for receiving a spectrum dispersion signal
Shift register and liquid crystal display device using the same