Resources Contact Us Home
Composition for forming insulating film and method for fabricating semiconductor device

Image Number 9 for United States Patent #7985700.

A method for fabricating a semiconductor device utilizing the step of forming a first insulating film of a porous material over a substrate; the step of forming on the first insulating film a second insulating film containing a silicon compound containing Si--CH.sub.3 bonds by 30-90%, and the step of irradiating UV radiation with the second insulating film formed on the first insulating film to cure the first insulating film. Thus, UV radiation having the wavelength which eliminates CH.sub.3 groups is sufficiently absorbed by the second insulating film, whereby the first insulating film is highly strengthened with priority by the UV cure, and the first insulating film can have the film density increased without having the dielectric constant increased.

  Recently Added Patents
Analysis, secure access to, and transmission of array images
Debris tray
Assembly for providing an aligned stack of two or more modules and a lithography system or a microscopy system comprising such an assembly
System and method for determining payroll related insurance premiums
Diazeniumdiolated phosphorylcholine polymers for nitric oxide release
Acceleration based mode switch
Lithographic apparatus and device manufacturing method
  Randomly Featured Patents
Nucleic acid encoding a novel morphogenic protein, OP-3
System and method for geologically-enhanced magnetic resonance imaging logs
Exhaust gas recirculation system for diesel engine
Process for the production of cationic starch
Cu additions to Nd-Fe-B alloys to reduce oxygen content in the ingot and rapidly solidified ribbon
Hand pump assembly with a pump mechanism which is independent of the pump housing
Multiport memory device and an operation method thereof
Swimming pool form
Pyridyloxyphenoxyalkanoates, alkenoates and derivatives thereof, useful as herbicidal agents
Log catcher