Resources Contact Us Home
Composition for forming insulating film and method for fabricating semiconductor device

Image Number 9 for United States Patent #7985700.

A method for fabricating a semiconductor device utilizing the step of forming a first insulating film of a porous material over a substrate; the step of forming on the first insulating film a second insulating film containing a silicon compound containing Si--CH.sub.3 bonds by 30-90%, and the step of irradiating UV radiation with the second insulating film formed on the first insulating film to cure the first insulating film. Thus, UV radiation having the wavelength which eliminates CH.sub.3 groups is sufficiently absorbed by the second insulating film, whereby the first insulating film is highly strengthened with priority by the UV cure, and the first insulating film can have the film density increased without having the dielectric constant increased.

  Recently Added Patents
Power control arrangement for long term evolution time division duplex method and apparatus
Method and apparatus for optimizing paging in a communication network
Apparatus with a local timing circuit that generates a multi-phase timing signal for a digital signal processing circuit
Fixing device and image forming apparatus
Mobile communication apparatus
Chemical method of making a suspension, emulsion or dispersion of pyrithione particles
Apparatus and method for information processing, program, and recording medium
  Randomly Featured Patents
Sheath bonding arrangement for fiber optic cable splices
Humidity monitor and method
Motorcycle disc brake lock
Fast acting explosive circuit interrupter
Passive bootstrapped charge pump for NMOS power device based regulators
Cutter for cylindrical locks
Method for forming an ESD protection circuit
Hydrolyzable and polymerizable vinylcyclopropane silanes
Crohn's disease antibody epitope peptide and reagent for testing Crohn's disease