Resources Contact Us Home
Sacrificial nitride and gate replacement

Image Number 2 for United States Patent #7981745.

Methods of forming a top oxide around a charge storage material layer of a memory cell and methods of improving quality of a top oxide around a charge storage material layer of a memory cell are provided. The method can involve providing a charge storage layer on a semiconductor substrate, a nitride layer on the charge storage layer, and a first poly layer on the nitride layer, and converting at least a portion of the nitride layer to a top oxide. By converting at least a portion of a nitride layer to a top oxide layer, the quality of the resultant top oxide layer can be improved.

  Recently Added Patents
Method of operating an election ballot printing system
Tuning peg for a stringed instrument
Method for decoding a spatially multiplexed data signal using a maximum likelihood detection
Pointer display device, pointer display/detection method, pointer display/detection program and information apparatus
Method for indicating the process of leaving a parking space
Isoselective polymerization of epoxides
  Randomly Featured Patents
Modular storage assembly
Method and device for controlling a gearshift mechanism
Casing treatment for compressors
Lowering power consumption during logic built-in self-testing (LBIST) via channel suppression
Apparatus for automatically determining rate of plasticizer absorption of resin powder
Apparatus and methods for automatically binding a stack of sheets with a nonspiral binding element
Camera structure for single lens reflex camera
High voltage laminar cathode materials for lithium rechargeable batteries, and process for making the same
Method and apparatus for coding and communicating data in noisy environment
Satellite communications system using multiple earth stations