Resources Contact Us Home
Sacrificial nitride and gate replacement

Image Number 2 for United States Patent #7981745.

Methods of forming a top oxide around a charge storage material layer of a memory cell and methods of improving quality of a top oxide around a charge storage material layer of a memory cell are provided. The method can involve providing a charge storage layer on a semiconductor substrate, a nitride layer on the charge storage layer, and a first poly layer on the nitride layer, and converting at least a portion of the nitride layer to a top oxide. By converting at least a portion of a nitride layer to a top oxide layer, the quality of the resultant top oxide layer can be improved.

  Recently Added Patents
Differentiated PSIP table update interval technology
Method for driving electrophoretic display device, electrophoretic display device, and electronic device
High purity diphenyl sulfone, preparation and use thereof for the preparation of a poly(aryletherketone)
Oxide material, electrophotographic photoreceptor, process cartridge, and image forming device
Phosphor adhesive sheet, light emitting diode element including phosphor layer, light emitting diode device, and producing methods thereof
Digital fine delay processing
Circuit arrangement for a piezo transformer, and method therefor
  Randomly Featured Patents
Swage fasteners with a high stand-off collar
Semiconductor device with reduced number of through holes and method of manufacturing the same
Process for the preparation of di- and polyamines of the diphenylmethane series
Archery bow sight having individually adjustable sight pins
Package having collar enclosure
Semi-automated operator assistance telecommunication calls
Parameter verification in an authentication system and method
Apparatus for retaining a workpiece upon a workpiece support and method of manufacturing same
Synchronous power down clock oscillator device
Fuel control system for gas turbine engine