Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Sacrificial nitride and gate replacement










Image Number 2 for United States Patent #7981745.

Methods of forming a top oxide around a charge storage material layer of a memory cell and methods of improving quality of a top oxide around a charge storage material layer of a memory cell are provided. The method can involve providing a charge storage layer on a semiconductor substrate, a nitride layer on the charge storage layer, and a first poly layer on the nitride layer, and converting at least a portion of the nitride layer to a top oxide. By converting at least a portion of a nitride layer to a top oxide layer, the quality of the resultant top oxide layer can be improved.








 
 
  Recently Added Patents
Multi-radio coexistence
Disc shaped high density recording medium
System and method for optimizing use of plug-in air conditioners and portable heaters
Package for product
Techniques for determining optimized local repair paths
Sensor interface engineering
Focus information generating device and focus information generating method
  Randomly Featured Patents
Inflatable basketball structure
Hidden change distribution grating and use in 3D moire measurement sensors and CMM applications
Dielectric ceramics
Ozone generator
Fan and fan housing with airflow-guiding stationary blades
Method and apparatus for correcting sensor output signal
Steering shaft
Feeder for a paintball gun
Pivotal motor mount for tensioning a belt drive with a one-way restraint allowing pivotal movement in a tensioning direction and preventing movement in a slackening direction
Elliptical exercise methods and apparatus