Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Sacrificial nitride and gate replacement










Image Number 2 for United States Patent #7981745.

Methods of forming a top oxide around a charge storage material layer of a memory cell and methods of improving quality of a top oxide around a charge storage material layer of a memory cell are provided. The method can involve providing a charge storage layer on a semiconductor substrate, a nitride layer on the charge storage layer, and a first poly layer on the nitride layer, and converting at least a portion of the nitride layer to a top oxide. By converting at least a portion of a nitride layer to a top oxide layer, the quality of the resultant top oxide layer can be improved.








 
 
  Recently Added Patents
Desk
Dual work function recessed access device and methods of forming
Multi-protocol data transfers
Synchronization of sound generated in binaural hearing system
Identifying conceptually related terms in search query results
Bit error mitigation
Polymeric compositions including their uses and methods of production
  Randomly Featured Patents
Method of cooling wafers
Computer-readable recording medium where document management program is recorded, document management apparatus, and document management method
Catalytic combustion process
Method for changing viewpoints using pressure-sensitive means, recording medium providing software program therefor, and entertainment system
System, method, and computer program product for saving and investing through use of transaction cards
Appliance for washing, massaging, or heat-treating the back
Two-stroke and four-stroke switching mechanism
Isolation circuit for use in RF amplifier bias circuit
Optical memory device with grooves and pits in selected dimensional relationship
Method for determining a route in a wireless mesh network using a metric based on radio and traffic load