Resources Contact Us Home
Field-effect transistor, semiconductor device, a method for manufacturing them, and a method of semiconductor crystal growth

Image Number 14 for United States Patent #7981744.

A field-effect transistor which comprises a buffer layer and a barrier layer each of which is made of a Group III nitride compound semiconductor and has a channel at the interface inside of the buffer layer to the barrier layer, wherein the barrier layer has multiple-layer structure comprising an abruct interface providing layer which composes the lowest semiconductor layer in said barrier layer and whose composition varies rapidly at the interface of said buffer layer, and an electrode connection plane providing layer which constructs the uppermost semiconductor layer and whose upper surface is formed flat.

  Recently Added Patents
Techniques for forming a contact to a buried diffusion layer in a semiconductor memory device
Churn prediction and management system
Single check memory devices and methods
Touch sensing technology
Method of operating an electromechanical converter, a controller and a computer program product
Biphotonic photosensitizers, nanoparticles containing the same and their use as drugs
Segmenting video based on timestamps in comments
  Randomly Featured Patents
Nozzle structure in washer fluid ejection apparatus
Fusing belt having polyurethane release layer
Barrier layer, IC via, and IC line forming methods
Localized thumbnail preview of related content during spatial browsing
Locking construction for a miter saw having a hinged linear guide mechanism
Interface seal for an aircraft
Imidazo[2,1-b]thiazole and thiazolo[3,2-a]-benzimidazole quaternary salts as hypoglycemic agents and growth promotants
Method for veneer redrying and handling
Flame retarded non-woven textile material comprised of flame retardant and vinyl chloride latex