Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Field-effect transistor, semiconductor device, a method for manufacturing them, and a method of semiconductor crystal growth










Image Number 14 for United States Patent #7981744.

A field-effect transistor which comprises a buffer layer and a barrier layer each of which is made of a Group III nitride compound semiconductor and has a channel at the interface inside of the buffer layer to the barrier layer, wherein the barrier layer has multiple-layer structure comprising an abruct interface providing layer which composes the lowest semiconductor layer in said barrier layer and whose composition varies rapidly at the interface of said buffer layer, and an electrode connection plane providing layer which constructs the uppermost semiconductor layer and whose upper surface is formed flat.








 
 
  Recently Added Patents
Server-side connection resource pooling
Method for the synthesis of an array of metal nanowire capable of supporting localized plasmon resonances and photonic device comprising said array
Data distribution unit for vehicle entertainment system
Secure data exchange between data processing systems
Positive electrode active material for nonaqueous electrolyte secondary battery
Probe for ultrasound diagnostic apparatus
Fuel basket spacer, apparatus and method using the same for storing high level radioactive waste
  Randomly Featured Patents
Method and system for optimizing data searches in tree structures
Attachable trimmer/edger for a lawnmower
Self measuring garment assembly
Licensing system and method for freely distributed information
Polyolefin resin composition and method for making polyolefin film
Thermal barrier coating applied with cold spray technique
Microphone
Absorbent article in an absorbent structure
Movable body feeding apparatus
Fiber separator for producing fiber reinforced metallic or resin body