Resources Contact Us Home
Field-effect transistor, semiconductor device, a method for manufacturing them, and a method of semiconductor crystal growth

Image Number 14 for United States Patent #7981744.

A field-effect transistor which comprises a buffer layer and a barrier layer each of which is made of a Group III nitride compound semiconductor and has a channel at the interface inside of the buffer layer to the barrier layer, wherein the barrier layer has multiple-layer structure comprising an abruct interface providing layer which composes the lowest semiconductor layer in said barrier layer and whose composition varies rapidly at the interface of said buffer layer, and an electrode connection plane providing layer which constructs the uppermost semiconductor layer and whose upper surface is formed flat.

  Recently Added Patents
Dihydronaphthyridinyl(organo)methanone analogs as positive allosteric mGluR5 modulators
Selecting input/output components of a mobile terminal
Personalized location information for mobile devices
Fishing apparatus
Solid state lighting devices with cellular arrays and associated methods of manufacturing
Internal wiring structure of semiconductor device
  Randomly Featured Patents
Display device, in particular for a motor vehicle
Sports ball bladder and method of manufacture
Home network name displaying methods and apparatus for multiple home networks
Navigation system utilizing audio CD player for data storage
Phase controlled incremental distance measuring system
Milk bottle
Selector valve device
Stethoscope head
Wire frame mounting structure for ornaments within a container
Method and apparatus for magnetic response imaging