Resources Contact Us Home
Field-effect transistor, semiconductor device, a method for manufacturing them, and a method of semiconductor crystal growth

Image Number 14 for United States Patent #7981744.

A field-effect transistor which comprises a buffer layer and a barrier layer each of which is made of a Group III nitride compound semiconductor and has a channel at the interface inside of the buffer layer to the barrier layer, wherein the barrier layer has multiple-layer structure comprising an abruct interface providing layer which composes the lowest semiconductor layer in said barrier layer and whose composition varies rapidly at the interface of said buffer layer, and an electrode connection plane providing layer which constructs the uppermost semiconductor layer and whose upper surface is formed flat.

  Recently Added Patents
IR(voltage) drop analysis in integrated circuit timing
Supplier capability methods, systems, and apparatuses for extended commerce
Storage system comprising multiple microprocessors and method for sharing processing in this storage system
Enhancement of semiconducting photovoltaic absorbers by the addition of alkali salts through solution coating techniques
Handover signaling in wireless networks
Method for manufacturing and reoxidizing a TiN/Ta.sub.2O.sub.5/TiN capacitor
Pointer display device, pointer display/detection method, pointer display/detection program and information apparatus
  Randomly Featured Patents
Method for contact conductor for electric vehicles
Method for producing body structure of fiber-reinforced composite, and body structure produced thereby
Drill press with overhead mount
Process for improved solid fuel combustion
Inclination angle measurement apparatus
Effects of materials and surface coatings on encrustation and biofilm formation
Electrical contact system
Seat adjuster for vehicle
Use of ramoplanin to treat diseases associated with the use of antibiotics
Monoclonal antibody production by EBV transformation of B cells