Resources Contact Us Home
Field-effect transistor, semiconductor device, a method for manufacturing them, and a method of semiconductor crystal growth

Image Number 14 for United States Patent #7981744.

A field-effect transistor which comprises a buffer layer and a barrier layer each of which is made of a Group III nitride compound semiconductor and has a channel at the interface inside of the buffer layer to the barrier layer, wherein the barrier layer has multiple-layer structure comprising an abruct interface providing layer which composes the lowest semiconductor layer in said barrier layer and whose composition varies rapidly at the interface of said buffer layer, and an electrode connection plane providing layer which constructs the uppermost semiconductor layer and whose upper surface is formed flat.

  Recently Added Patents
Reading apparatus and reading method
Driving support device, method, and program
Surface-emitting laser light source using two-dimensional photonic crystal
Gas cap removal tool
Varying latency timers in a wireless communication system
Chemically bonded carbon nanotube-polymer hybrid and nanocomposite thereof
Aisle barrier
  Randomly Featured Patents
Product, method and equipment for remote communication using chromogenic materials
Video circuit for generating special fast dynamic displays
Scalable semiconductor waveguide amplifier
Method of and kit for energy transfer immunoassay with colloidal particles
Apparatus for reading a phosphor plate image
Semiconductor light emitting device
Modified frequency modulation
Process for the crystallizing L-.alpha.-aspartyl-L-phenylalanine methyl ester from the solution
Multi-channel programmable gain amplifier controlled with a serial interface