Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Field-effect transistor, semiconductor device, a method for manufacturing them, and a method of semiconductor crystal growth










Image Number 14 for United States Patent #7981744.

A field-effect transistor which comprises a buffer layer and a barrier layer each of which is made of a Group III nitride compound semiconductor and has a channel at the interface inside of the buffer layer to the barrier layer, wherein the barrier layer has multiple-layer structure comprising an abruct interface providing layer which composes the lowest semiconductor layer in said barrier layer and whose composition varies rapidly at the interface of said buffer layer, and an electrode connection plane providing layer which constructs the uppermost semiconductor layer and whose upper surface is formed flat.








 
 
  Recently Added Patents
Translucent internal graphics enhancement
Spoofing detection for civilian GNSS signals
Protective vest
Creating three dimensional graphics data
Computer server capable of supporting CPU virtualization
Vehicle and communication monitoring
Cantilever of scanning probe microscope and method for manufacturing the same, method for inspecting thermal assist type magnetic head device and its apparatus
  Randomly Featured Patents
Retinal camera
Drive device
Herbicidal morpholinobenzimidazoles
Quick-release self-adjusting latch for adjustable basketball goal assembly
Production line management system
Locking arrangement for doors and the like
Phenyl bicyclic methyl azetidine derivatives as sphingosine-1 phosphate receptors modulators
Hot swap and plug-and-play for RFID devices
Enclosure for suppression of air-coupled noise produced by seismic vibrators
Semiconductor-on-diamond devices and associated methods