Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Field-effect transistor, semiconductor device, a method for manufacturing them, and a method of semiconductor crystal growth










Image Number 13 for United States Patent #7981744.

A field-effect transistor which comprises a buffer layer and a barrier layer each of which is made of a Group III nitride compound semiconductor and has a channel at the interface inside of the buffer layer to the barrier layer, wherein the barrier layer has multiple-layer structure comprising an abruct interface providing layer which composes the lowest semiconductor layer in said barrier layer and whose composition varies rapidly at the interface of said buffer layer, and an electrode connection plane providing layer which constructs the uppermost semiconductor layer and whose upper surface is formed flat.








 
 
  Recently Added Patents
Method of publicly displaying a person's relationship status
Semiconductor device having germanium active layer with underlying parasitic leakage barrier layer
System and method for configuring software applications in a motor vehicle
Use of LPA for encouraging pregnancy, and fertility agent
Radiation imaging device
Color imaging device
Semiconductor power amplifier
  Randomly Featured Patents
Multiple stage air-intake filter apparatus
Furnace for waste material
Rotary vacuum blower
Innovative siloxane block copolymers with rigid spacers and their use
Audio compression and decompression using integer-reversible modulated lapped transforms
Method of electronic settlement with a mobile terminal
Padlock shackle
Tricycle with two fore wheels
Method for screening allergic disease-related molecule and cell lines to be used in the method
Undersea hydraulic coupling with tapered probe