Resources Contact Us Home
Field-effect transistor, semiconductor device, a method for manufacturing them, and a method of semiconductor crystal growth

Image Number 13 for United States Patent #7981744.

A field-effect transistor which comprises a buffer layer and a barrier layer each of which is made of a Group III nitride compound semiconductor and has a channel at the interface inside of the buffer layer to the barrier layer, wherein the barrier layer has multiple-layer structure comprising an abruct interface providing layer which composes the lowest semiconductor layer in said barrier layer and whose composition varies rapidly at the interface of said buffer layer, and an electrode connection plane providing layer which constructs the uppermost semiconductor layer and whose upper surface is formed flat.

  Recently Added Patents
Elite event EE-GM3 and methods and kits for identifying such event in biological samples
Power supply with adapted output voltage
Reptile breeding tank
Method of providing targeted communications to a user of a printing system
De-gassing lubrication reclamation system
Vehicle floor assembly with insert
  Randomly Featured Patents
Pectate lyases
Polysilazane-modified polyamine hardeners for epoxy resins
Suspension fork
Method and device for estimating a nitrogen oxide mass stored in a catalytic trapping device of a motor vehicle
Rescue and invalid support belt
Lightweight, rigid, compact configuration for the voice coil, carriage and printed circuit cable in a disc drive
System and method for delivering cryogenic fluids
Pneumatic tires with apertured puncture sealing layer
Character-information conversion apparatus and method for converting character information
Editing control apparatus and editing control method employing compressed audio-visual information