Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Field-effect transistor, semiconductor device, a method for manufacturing them, and a method of semiconductor crystal growth










Image Number 13 for United States Patent #7981744.

A field-effect transistor which comprises a buffer layer and a barrier layer each of which is made of a Group III nitride compound semiconductor and has a channel at the interface inside of the buffer layer to the barrier layer, wherein the barrier layer has multiple-layer structure comprising an abruct interface providing layer which composes the lowest semiconductor layer in said barrier layer and whose composition varies rapidly at the interface of said buffer layer, and an electrode connection plane providing layer which constructs the uppermost semiconductor layer and whose upper surface is formed flat.








 
 
  Recently Added Patents
Treatment of cancer using the sodium salt of a benzoic acid derivative
Anti-reductive high-frequency ceramic dielectric material sintered at low temperature and matched with copper internal electrode
High voltage circuit for electrical stimulation
Content display system
Wafer level packaging structure with large contact area and preparation method thereof
Integrated projector system
System and method for secure power systems infrastructure communications
  Randomly Featured Patents
Audio decoding of multi-audio-object signal using upmixing
BGA footprint pattern for increasing number of routing channels per PCB layer
Embedding cablelike members
Holder for items with hard stems
Electrode for electric discharge surface treatment, method for manufacturing electrode, and method for storing electrode
Molding machine for an oriented and blown hollow container with a label
Punch
Holder for towel or the like
Fuel pump
Method of reducing imiquimod impurity formation