Resources Contact Us Home
Field-effect transistor, semiconductor device, a method for manufacturing them, and a method of semiconductor crystal growth

Image Number 13 for United States Patent #7981744.

A field-effect transistor which comprises a buffer layer and a barrier layer each of which is made of a Group III nitride compound semiconductor and has a channel at the interface inside of the buffer layer to the barrier layer, wherein the barrier layer has multiple-layer structure comprising an abruct interface providing layer which composes the lowest semiconductor layer in said barrier layer and whose composition varies rapidly at the interface of said buffer layer, and an electrode connection plane providing layer which constructs the uppermost semiconductor layer and whose upper surface is formed flat.

  Recently Added Patents
Disk drive with a subset of sectors with reduced write-to-read gap
Safety device and method for electric heating appliances
Method for manufacturing a substrate for a display device
Methods and compositions to treat and detect misfolded-SOD1 mediated diseases
Method of preparing highly fluorinated carboxylic acids and their salts
Wireless communications system, wireless communications apparatus, wireless communications method and computer program for wireless communication
Methods and systems for automatically identifying a logical circuit failure in a data network
  Randomly Featured Patents
Device and method for performing maintenance on an apparatus in a flow duct
Structure of a bracket component for the press button of a mobile phone
Vehicle slide door alignment system
Circuits providing greater depth and/or asymmetric access ports for first-in first-out memory circuits (FIFOs)
Device for continuous reeling of a pulp web
System for boundary trace with reproduction facility
Lamination for an electric motor
Disposable vacuum filtration funnel with integral prefilter
Water cooler reservoir
Process for continuous production of optically anisotropic pitch