Resources Contact Us Home
Field-effect transistor, semiconductor device, a method for manufacturing them, and a method of semiconductor crystal growth

Image Number 13 for United States Patent #7981744.

A field-effect transistor which comprises a buffer layer and a barrier layer each of which is made of a Group III nitride compound semiconductor and has a channel at the interface inside of the buffer layer to the barrier layer, wherein the barrier layer has multiple-layer structure comprising an abruct interface providing layer which composes the lowest semiconductor layer in said barrier layer and whose composition varies rapidly at the interface of said buffer layer, and an electrode connection plane providing layer which constructs the uppermost semiconductor layer and whose upper surface is formed flat.

  Recently Added Patents
Mobility management in a communications system
Obviation of recovery of data store consistency for application I/O errors
Display apparatus, control method thereof, and program
Supporting multiple channels of a single interface
Administrable compositions
Treatment of diabetes with milk protein hydrolysate
Image reading apparatus and image forming apparatus
  Randomly Featured Patents
Apparatus and method for threading tape wound on a reel through a cassette loading machine
Emulsion explosive compositions
Dual writing device and its control method
Prosthetic knee joint
RNA containing modified nucleosides and methods of use thereof
Rough machining electroerosion method for machining a channel in a workpiece
Hose clip of the self-holding type
Osteospermum plant named `Fidostwhi`
Imaging process
Emulsions based on acrylic polymers