Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Field-effect transistor, semiconductor device, a method for manufacturing them, and a method of semiconductor crystal growth










Image Number 13 for United States Patent #7981744.

A field-effect transistor which comprises a buffer layer and a barrier layer each of which is made of a Group III nitride compound semiconductor and has a channel at the interface inside of the buffer layer to the barrier layer, wherein the barrier layer has multiple-layer structure comprising an abruct interface providing layer which composes the lowest semiconductor layer in said barrier layer and whose composition varies rapidly at the interface of said buffer layer, and an electrode connection plane providing layer which constructs the uppermost semiconductor layer and whose upper surface is formed flat.








 
 
  Recently Added Patents
(4926
Weak acid recovery system for ethanol separation processes
Piezoelectric speaker and method of manufacturing the same
Multi-touch recognition resistive touch screen for recognizing multi-touch coordinates through capacitor charging time
Stable nanoemulsions for ultrasound-mediated drug delivery and imaging
Milk frother
Electromagnetic sensor cable and electrical configuration therefor
  Randomly Featured Patents
Rotary printing machine with liquid supply apparatus comprising an endless band
Shaking test apparatus and method for structures
Joint compression wrap
Time indicating light fixture
Aqueous fuel for internal combustion engine and method of combustion
Method and apparatus for making an air cell cushioning product
Method and apparatus for cleaning the surface of a semiconductor slice with a liquid spray of de-ionized water
Nitrogen treating method
Power semiconductor module and method for cooling a power semiconductor module
Magnetic motor