Resources Contact Us Home
Field-effect transistor, semiconductor device, a method for manufacturing them, and a method of semiconductor crystal growth

Image Number 13 for United States Patent #7981744.

A field-effect transistor which comprises a buffer layer and a barrier layer each of which is made of a Group III nitride compound semiconductor and has a channel at the interface inside of the buffer layer to the barrier layer, wherein the barrier layer has multiple-layer structure comprising an abruct interface providing layer which composes the lowest semiconductor layer in said barrier layer and whose composition varies rapidly at the interface of said buffer layer, and an electrode connection plane providing layer which constructs the uppermost semiconductor layer and whose upper surface is formed flat.

  Recently Added Patents
Methods circuits apparatuses and systems for facilitating access to online content
Thin film switch and press key/keyboard using the same
High-frequency power amplifier
System and method for operating an electric power converter
Image forming apparatus with static elimination
Dynamic facsimile transcoding in a unified messaging platform
Radio frequency power delivery system
  Randomly Featured Patents
Semiconductor device and manufacturing method thereof
Twin row planter
Active matrix type liquid-crystal display unit and method of driving the same
Relay board with bonding pads connected by wirings
Bulk single crystal ternary substrates for a thermophotovoltaic energy conversion system
Suction device for cleaning skin
Perfected motion device to open and close a wardrobe door
Clipless pedal
Nonaqueous electrolyte secondary battery