Resources Contact Us Home
Field-effect transistor, semiconductor device, a method for manufacturing them, and a method of semiconductor crystal growth

Image Number 13 for United States Patent #7981744.

A field-effect transistor which comprises a buffer layer and a barrier layer each of which is made of a Group III nitride compound semiconductor and has a channel at the interface inside of the buffer layer to the barrier layer, wherein the barrier layer has multiple-layer structure comprising an abruct interface providing layer which composes the lowest semiconductor layer in said barrier layer and whose composition varies rapidly at the interface of said buffer layer, and an electrode connection plane providing layer which constructs the uppermost semiconductor layer and whose upper surface is formed flat.

  Recently Added Patents
Coding circuitry for difference-based data transformation
MEMS autofocus actuator
Digital fine delay processing
High voltage fast recovery trench diode
Method for treating wounds for mammals, wound healer compound, and method of manufacturing thereof
Scanning optical positioning system with spatially triangulating receivers
Direct chemical vapor deposition of graphene on dielectric surfaces
  Randomly Featured Patents
Yarn tensioning method and device for textile weaving machines
Swash-plate type rotary compressor with drive shaft, lubrication
Combination neutron-gamma ray detector
Interpreting an application message at a network element using sampling and heuristics
Compositions for increasing athletic performance in mammals
Tandem-free intersystem voice communication
Electromechanical transmission control apparatus
Nucleic acid transporter systems and methods of use
Reproducing human posture