Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Field-effect transistor, semiconductor device, a method for manufacturing them, and a method of semiconductor crystal growth










Image Number 13 for United States Patent #7981744.

A field-effect transistor which comprises a buffer layer and a barrier layer each of which is made of a Group III nitride compound semiconductor and has a channel at the interface inside of the buffer layer to the barrier layer, wherein the barrier layer has multiple-layer structure comprising an abruct interface providing layer which composes the lowest semiconductor layer in said barrier layer and whose composition varies rapidly at the interface of said buffer layer, and an electrode connection plane providing layer which constructs the uppermost semiconductor layer and whose upper surface is formed flat.








 
 
  Recently Added Patents
Heteroleptic iridium complexes as dopants
Hand mixer
Apparatus and method for discharging capacitor of input filter of power supply, and power supply including the apparatus
Method and apparatus for connecting to external device
Expression of dirigent gene EG261 and its orthologs and paralogs enhances pathogen resistance in plants
Circuit board having semiconductor chip embedded therein
Universal tablet and smartphone holder
  Randomly Featured Patents
Cooling system for recording/reproducing apparatus, with airflow restricted from read/write media section
Process using cracking calalyst containing strontium carbonate
Method for binding a water-soluble direct dye to paper
Method and apparatus for initializing filter coefficients in an echo canceller
Fabric softening and antistatic particulate wash cycle laundry additive containing cationic/anionic surfactant complex on bentonite
Combined towel and putter headcover
Nut shelling device
Ceiling panel for an airplane
Material handling device
Energy managing sun visor mounting arrangement