Resources Contact Us Home
Field-effect transistor, semiconductor device, a method for manufacturing them, and a method of semiconductor crystal growth

Image Number 13 for United States Patent #7981744.

A field-effect transistor which comprises a buffer layer and a barrier layer each of which is made of a Group III nitride compound semiconductor and has a channel at the interface inside of the buffer layer to the barrier layer, wherein the barrier layer has multiple-layer structure comprising an abruct interface providing layer which composes the lowest semiconductor layer in said barrier layer and whose composition varies rapidly at the interface of said buffer layer, and an electrode connection plane providing layer which constructs the uppermost semiconductor layer and whose upper surface is formed flat.

  Recently Added Patents
Method and system for quantifying viewer awareness of advertising images in a video source
Methods for integrating the production of cellulose nanofibrils with the production of cellulose nanocrystals
Predicting popularity of electronic publications
Analysis, secure access to, and transmission of array images
Limit switch
High performance strained source-drain structure and method of fabricating the same
Integrated circuit packaging system with laser hole and method of manufacture thereof
  Randomly Featured Patents
Constant bearer
Force measurement system having a displaceable force measurement assembly
Device having two perovskite crystalline layers that shows hysteresis and piezoelectric behavior
Thermoplastic polyolefin composite structure
Saw blade guide and components therefor
Apparatus and methods for differentiating between synchronous and asynchronous response signals in secondary radar devices
Fused heterocyclic benzenecarboxamide derivatives and PGD.sub.2 antagonists comprising them
Polymeric coating for reducing the rate of release of a therapeutic substance from a stent
Perforated material
Method of preparing magnesium and calcium dihydrocarbyldithiophosphate