Resources Contact Us Home
Method for manufacturing semiconductor epitaxial crystal substrate

Image Number 7 for United States Patent #7951685.

The present invention provides a method for manufacturing a gallium nitride semiconductor epitaxial crystal substrate with a dielectric film which has a low gate leak current and negligibly low gate lag, drain lag, and current collapse characteristics. The method for manufacturing a semiconductor epitaxial crystal substrate is a method for manufacturing a semiconductor epitaxial crystal substrate in which a dielectric layer of a nitride dielectric material or an oxide dielectric material in an amorphous form functioning as a passivation film or a gate insulator is provided on a surface of a nitride semiconductor crystal layer grown by metal organic chemical vapor deposition. In the method, after the nitride semiconductor crystal layer is grown in an epitaxial growth chamber, the dielectric layer is grown on the nitride semiconductor crystal layer in the epitaxial growth chamber.

  Recently Added Patents
Trimming circuit and semiconductor device
Head shield
Methods of diagnosing a plasmodium infection
Probe for ultrasound diagnostic apparatus
Method and apparatus for verifiable generation of public keys
Tailoring the band gap of solar cells made of liquid silane by adding germanium
  Randomly Featured Patents
Glove bag
Float with light indicators
Drying system
Method and system for protecting cross-domain interaction of a web application on an unmodified browser
Recliner chair having resilient head rest
Packing unit for reciprocating pump polished rod
Woven belt for a corrugated cardboard machine
Method and apparatus to effect a fine grain size in continuous cast metals
Asymmetric process for the preparation of diarylethylpiperazines derivatives and novel asymmetric diarylmethylamines as intermediates