Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method for manufacturing semiconductor epitaxial crystal substrate










Image Number 7 for United States Patent #7951685.

The present invention provides a method for manufacturing a gallium nitride semiconductor epitaxial crystal substrate with a dielectric film which has a low gate leak current and negligibly low gate lag, drain lag, and current collapse characteristics. The method for manufacturing a semiconductor epitaxial crystal substrate is a method for manufacturing a semiconductor epitaxial crystal substrate in which a dielectric layer of a nitride dielectric material or an oxide dielectric material in an amorphous form functioning as a passivation film or a gate insulator is provided on a surface of a nitride semiconductor crystal layer grown by metal organic chemical vapor deposition. In the method, after the nitride semiconductor crystal layer is grown in an epitaxial growth chamber, the dielectric layer is grown on the nitride semiconductor crystal layer in the epitaxial growth chamber.








 
 
  Recently Added Patents
Discharge circuit and method
Method and system for dynamic storage tiering using allocate-on-write snapshots
Method for accessing wireless network
Methods of synthesizing heteromultimeric polypeptides in yeast using a haploid mating strategy
Direct chemical vapor deposition of graphene on dielectric surfaces
Moving picture decoding device and moving picture decoding method
Compounds for nonsense suppression and methods for their use
  Randomly Featured Patents
Blade arm
Cooling stand
Planer or similar article
Image forming apparatus with protective agent applying unit and process cartridge
Storage hook for razor and blades
Wireless railroad monitoring
Valve seats
High power optical apparatus employing large-mode-area, multimode, gain-producing optical fibers
Detergent compositions containing polyether polycarboxylates
Bowling lane maintenance apparatus