Resources Contact Us Home
Method for manufacturing semiconductor epitaxial crystal substrate

Image Number 7 for United States Patent #7951685.

The present invention provides a method for manufacturing a gallium nitride semiconductor epitaxial crystal substrate with a dielectric film which has a low gate leak current and negligibly low gate lag, drain lag, and current collapse characteristics. The method for manufacturing a semiconductor epitaxial crystal substrate is a method for manufacturing a semiconductor epitaxial crystal substrate in which a dielectric layer of a nitride dielectric material or an oxide dielectric material in an amorphous form functioning as a passivation film or a gate insulator is provided on a surface of a nitride semiconductor crystal layer grown by metal organic chemical vapor deposition. In the method, after the nitride semiconductor crystal layer is grown in an epitaxial growth chamber, the dielectric layer is grown on the nitride semiconductor crystal layer in the epitaxial growth chamber.

  Recently Added Patents
MAC structure with packet-quasi-static blocks and ARQ
Armor system having ceramic composite with improved architecture
Dental matrix band
Method and apparatus for answering and recording automatically in visual telephone service
Liquid crystal shutter component and liquid crystal shutter
Solid state imaging device
Method to evaluate the quantity of methane produced by a dairy ruminant and method to reduce and control this quantity
  Randomly Featured Patents
Oxazin(ethyl)one compounds used as fungicides
Drive train for a header of a harvesting machine
Method of and apparatus of producing low boiling point hydrocarbon oil from waste plastics or waste rubbers
Method for gasoline yield enhancement in the fixed bed methanol-to-gasoline process
Turbine housing
Biosensors and methods of using the same
Portable cellular phone system and portable cellular phone terminal device used in same system
Prepay telecommunications system
Optical recording medium having auxiliary information and reference clock
In situ titanium aluminide deposit in high aspect ratio features