Resources Contact Us Home
Method for manufacturing semiconductor epitaxial crystal substrate

Image Number 7 for United States Patent #7951685.

The present invention provides a method for manufacturing a gallium nitride semiconductor epitaxial crystal substrate with a dielectric film which has a low gate leak current and negligibly low gate lag, drain lag, and current collapse characteristics. The method for manufacturing a semiconductor epitaxial crystal substrate is a method for manufacturing a semiconductor epitaxial crystal substrate in which a dielectric layer of a nitride dielectric material or an oxide dielectric material in an amorphous form functioning as a passivation film or a gate insulator is provided on a surface of a nitride semiconductor crystal layer grown by metal organic chemical vapor deposition. In the method, after the nitride semiconductor crystal layer is grown in an epitaxial growth chamber, the dielectric layer is grown on the nitride semiconductor crystal layer in the epitaxial growth chamber.

  Recently Added Patents
Quick mounting device
High density molecular memory storage with read and write capabilities
Process for shaping polymeric articles
Pressure washer
Methods of producing the membranes and the uses of membranes as battery separator films
Real-time application of filters based on image attributes
Phosphonate compounds
  Randomly Featured Patents
Cable coupler having retained wedges
Magnetic storage medium formed of carbon nanotube arrays
Method of and device for milking a dairy animal dependent on the lactation periods
Composite materials and methods of making the same
Variable coupler fiberoptic sensor
Plug connector
Noise reduction for a cluster-based approach for targeted item delivery with inventory management
Vitamin organizer
G protein chimeras and methods of screening compounds
Power allocation for power control bits in a cellular network