Resources Contact Us Home
Method for manufacturing semiconductor epitaxial crystal substrate

Image Number 7 for United States Patent #7951685.

The present invention provides a method for manufacturing a gallium nitride semiconductor epitaxial crystal substrate with a dielectric film which has a low gate leak current and negligibly low gate lag, drain lag, and current collapse characteristics. The method for manufacturing a semiconductor epitaxial crystal substrate is a method for manufacturing a semiconductor epitaxial crystal substrate in which a dielectric layer of a nitride dielectric material or an oxide dielectric material in an amorphous form functioning as a passivation film or a gate insulator is provided on a surface of a nitride semiconductor crystal layer grown by metal organic chemical vapor deposition. In the method, after the nitride semiconductor crystal layer is grown in an epitaxial growth chamber, the dielectric layer is grown on the nitride semiconductor crystal layer in the epitaxial growth chamber.

  Recently Added Patents
Air filter
Computer system and volume migration control method using the same
Cooking brush
Light fitting
Policy based cryptographic application programming interface in secure memory
Dynamic report mapping apparatus to physical data source when creating report definitions for information technology service management reporting for peruse of report definition transparency a
Coated article and method for making the same
  Randomly Featured Patents
Terminal seal for electrolytic devices
Link element
Yarn delivery device and drive wheel suitable for this purpose
Ground service vehicle
Article of clothing
Pressure activated flow path seal for a steam turbine
Novel halobisphenolethylene polycarbonate-vinyl aromatic resin blends
Cranial remodeling device manufacturing system
Data processing system, block erasing type memory device and memory storing program for controlling memory device
Method for superimposing statistical information on tabular data