Resources Contact Us Home
Noise reduction in semiconductor device using counter-doping

Image Number 9 for United States Patent #7947562.

One or more embodiments describe a method of fabricating a silicon based metal oxide semiconductor device, including introducing a first dopant into a first partial completion of the device, the first dopant including a first noise reducing species; and introducing a second dopant into a second partial completion of the device, the second dopant and the first dopant being opposite conductivity types.

  Recently Added Patents
Coated article and method for making the same
Plants and seeds of hybrid corn variety CH260114
Spatially pre-processed target-to-jammer ratio weighted filter and method thereof
Test framework of visual components in a multitenant database environment
Method and apparatus for selective decoding in a wireless communication system
Cake knife handle
Methods and system for displaying segmented images
  Randomly Featured Patents
Policy based sharing of redundant data across storage pools in a deduplicating system
Torque transmitting apparatus with hydrokinetic torque converter
Relief valve improvement
Belt buckle
Portable solar battery
Semiconductor device and processing method for starting the same
Cooled piston for internal combustion engines
System and method for providing switch redundancy between two server systems
Device for supplying and replacing pouring tubes in a continuous casting plant
Combined measuring and pouring container