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Noise reduction in semiconductor device using counter-doping










Image Number 2 for United States Patent #7947562.

One or more embodiments describe a method of fabricating a silicon based metal oxide semiconductor device, including introducing a first dopant into a first partial completion of the device, the first dopant including a first noise reducing species; and introducing a second dopant into a second partial completion of the device, the second dopant and the first dopant being opposite conductivity types.








 
 
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