Resources Contact Us Home
Lateral insulated gate bipolar transistor having a retrograde doping profile in base region and method of manufacture thereof

Image Number 10 for United States Patent #7944022.

In a semiconductor device of the present invention, a first base region 16 is extended to a part under a gate electrode 7 while having a vertical concentration profile of an impurity that increases from the surface of a semiconductor layer 3 and becomes maximum under an emitter region 5, and the length in the lateral direction from a point where the impurity concentration becomes maximum located under an end of the gate electrode 7 to the boundary with a second base region 15 is not smaller than the length in the vertical direction from the point where the impurity concentration becomes maximum to the boundary with the second base region 15.

  Recently Added Patents
Reception circuit and signal reception method
Hardware/software debugging using memory access parameters
Mitigating single point failure of devices in an analyte monitoring system and methods thereof
Regenerative braking control to mitigate powertrain oscillation
Reaction medium for detecting and/or identifying bacteria of the Legionella genus
Closed cell culture system
  Randomly Featured Patents
Frequency assisted digital timing recovery
Apparatus for treating paint roller covers
Travel trailer having improved turning radius
Apparatus and method for testing semiconductor chip
Herpes simplex virus as a vector
Two-part table top
Performance abnormality analysis apparatus, method, and program, and analysis result display method for performance abnormality analysis apparatus
Buckling mechanism
Parallel interferometric measurements using an expanded local oscillator signal
Polygonal cutting insert