Resources Contact Us Home
Methods relating to trench-based support structures for semiconductor devices

Image Number 12 for United States Patent #7923345.

A method of manufacturing a semiconductor device wherein a laminate structure comprising a sacrificial layer is sandwiched between two etch stop layers (8,11) and which separates a semiconductor membrane (9) from a bulk substrate (1) is used to provide an underetched structure. Access trenches (4) and support trenches (5) are formed in the layered structure through the thickness of the semiconductor layer (9) and through the upper etch stop layer (8). The support trenches extend deeper through the sacrificial layer (12) and the lower etch stop layer and are filled. The sacrificial layer is exposed and etched away selectively to the etch stop layers to form a cavity (30) and realise a semiconductor membrane which is attached to the bulk substrate via a vertical support structure comprising the filled support trenches.

  Recently Added Patents
Lateral double diffused metal oxide semiconductor device and method of manufacturing the same
Modular sport center
Emulsions containing arylboronic acids and medical articles made therefrom
Digital display devices and digital projectors with expanded color gamut
Optoelectronic component and method for producing an optoelectronic component
Event handling in an integrated execution environment
  Randomly Featured Patents
Chloro-(2-halogeno-1-fluoromethyl-ethoxy)-methanes and their preparation
Zero turning radius earthworking implement
Bottom portion of a golf club head for a putter
Semiconductor device
Combustion chamber liner
Method and apparatus for image formation
Slidable window assembly with retractable sunshade
Notebook insert filing folder
Laser telemetry and Doppler measurement system with pulse compression
Optical fiber array