Resources Contact Us Home
Methods relating to trench-based support structures for semiconductor devices

Image Number 12 for United States Patent #7923345.

A method of manufacturing a semiconductor device wherein a laminate structure comprising a sacrificial layer is sandwiched between two etch stop layers (8,11) and which separates a semiconductor membrane (9) from a bulk substrate (1) is used to provide an underetched structure. Access trenches (4) and support trenches (5) are formed in the layered structure through the thickness of the semiconductor layer (9) and through the upper etch stop layer (8). The support trenches extend deeper through the sacrificial layer (12) and the lower etch stop layer and are filled. The sacrificial layer is exposed and etched away selectively to the etch stop layers to form a cavity (30) and realise a semiconductor membrane which is attached to the bulk substrate via a vertical support structure comprising the filled support trenches.

  Recently Added Patents
Gateway channel utilization
Polyureas made from aminocrotonates and enaminones
Tracking data eye operating margin for steady state adaptation
Selective high frequency spinal cord modulation for inhibiting pain with reduced side effects, and associated systems and methods
AC/DC converter
Puncture resistant fabric
Controller interface providing improved data reliability
  Randomly Featured Patents
Integral electric generator, multiplexer, data acquisition system
Polymeric compositions and hydrogels formed therefrom
Process for the preparation of graphite intercalation compound and novel graphite intercalation compound
Nucleic acid molecules associated with plant cell proliferation and growth and uses thereof
Adaptive motor control circuit and method
Coated bucket damper pin and related method
Anti-dither optical container sensor with sensors separation measurement
Airbag module
Coated media for improved output tray stacking performance
Toilet seat closure