Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Methods relating to trench-based support structures for semiconductor devices










Image Number 12 for United States Patent #7923345.

A method of manufacturing a semiconductor device wherein a laminate structure comprising a sacrificial layer is sandwiched between two etch stop layers (8,11) and which separates a semiconductor membrane (9) from a bulk substrate (1) is used to provide an underetched structure. Access trenches (4) and support trenches (5) are formed in the layered structure through the thickness of the semiconductor layer (9) and through the upper etch stop layer (8). The support trenches extend deeper through the sacrificial layer (12) and the lower etch stop layer and are filled. The sacrificial layer is exposed and etched away selectively to the etch stop layers to form a cavity (30) and realise a semiconductor membrane which is attached to the bulk substrate via a vertical support structure comprising the filled support trenches.








 
 
  Recently Added Patents
Coffee cup stationery tab
Image processing apparatus capable of using replacement component, image forming apparatus capable of using replacement component, and method of administrating replacement component
Data storage device with surface ornamentation
Reproducible dither-noise injection
Uplink synchronization management in wireless networks
Front face of vehicle wheel
Sparse data compression
  Randomly Featured Patents
Narrow-band integer cycle or impulse modulation spectrum sharing method
Gear drive
Automatic vehicle headlight/taillight control
Steering wheel assembly with communication keyboard
Geranium plant named `Jewel`
Suspension type antiperspirant stick
Height adjustment mechanism for chair backrest or arm
Method and apparatus for machine check abort handling in a multiprocessing system
Printer
Speaker