Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Methods relating to trench-based support structures for semiconductor devices










Image Number 12 for United States Patent #7923345.

A method of manufacturing a semiconductor device wherein a laminate structure comprising a sacrificial layer is sandwiched between two etch stop layers (8,11) and which separates a semiconductor membrane (9) from a bulk substrate (1) is used to provide an underetched structure. Access trenches (4) and support trenches (5) are formed in the layered structure through the thickness of the semiconductor layer (9) and through the upper etch stop layer (8). The support trenches extend deeper through the sacrificial layer (12) and the lower etch stop layer and are filled. The sacrificial layer is exposed and etched away selectively to the etch stop layers to form a cavity (30) and realise a semiconductor membrane which is attached to the bulk substrate via a vertical support structure comprising the filled support trenches.








 
 
  Recently Added Patents
Device and method for unified codes
Commissioning incoming packet switched connections
Methods and apparatuses for configuring and operating graphics processing units
Enterprise seamless mobility
Injection molding method and injection molding machine
Detection and use of low molecular-weight modulators of the cold-menthol receptor TRPM8
Laboratory spatula
  Randomly Featured Patents
Electronic communication wire connector
Radiation shielding and thermally conductive gasket with internal bonding agent
Brandable drip-stop collar for bottles
Apparatus for transporting biological samples
Welding apparatus
Amniotomy device and assembly
Method of positioning movable body
Vacuum system for a highchair
Spinal fixation apparatus
Press for expressing liquids from substances containing them, especially musts