Resources Contact Us Home
Split gate non-volatile memory cell with improved endurance and method therefor

Image Number 9 for United States Patent #7923328.

A non-volatile memory cell including a substrate in which is formed a source region and a drain region defining a channel region between the source region and the drain region is provided. The non-volatile memory cell further includes a select gate structure overlying a first portion of the channel region. The non-volatile memory cell further includes a control gate structure formed overlying a second portion of the channel region, wherein the control gate structure includes a nanocrystal stack having a height, wherein the control gate structure has a convex shape in a corner region formed at an intersection of a first plane substantially parallel to a top surface of the substrate and a second plane substantially parallel to a side surface of the control gate structure, wherein a ratio of radius of the control gate structure in the corner region to the height of the nanocrystal stack is at least 0.5.

  Recently Added Patents
Defensin polynucleotides and methods of use
Systems and methods for adaptive blind mode equalization
Thwarting keyloggers using proxies
Small molecule inhibitors of kynurenine-3-monooxygenase
Display system, display control method and computer program
Pear-shaped convertible reading glasses
Antenna array system
  Randomly Featured Patents
Cold-water-soluble gelatin powders
Multi-energy frequency-multiplying particle accelerator and method thereof
Method and apparatus for measuring neutron characteristics of material surrounding a borehole
Quaternary ammonium monomers
Small magnetic disk cartridge
Firearm accessory mount
Methods and apparatus for computer aided reading training
Audible and visual effects as a result of adaptive tablet scanning
Method for measuring and determining a rotation angle of a rotating object
Tracking algorithm for linear array signal processor for Fabry-Perot cross-correlation pattern and method of using same