Resources Contact Us Home
Split gate non-volatile memory cell with improved endurance and method therefor

Image Number 9 for United States Patent #7923328.

A non-volatile memory cell including a substrate in which is formed a source region and a drain region defining a channel region between the source region and the drain region is provided. The non-volatile memory cell further includes a select gate structure overlying a first portion of the channel region. The non-volatile memory cell further includes a control gate structure formed overlying a second portion of the channel region, wherein the control gate structure includes a nanocrystal stack having a height, wherein the control gate structure has a convex shape in a corner region formed at an intersection of a first plane substantially parallel to a top surface of the substrate and a second plane substantially parallel to a side surface of the control gate structure, wherein a ratio of radius of the control gate structure in the corner region to the height of the nanocrystal stack is at least 0.5.

  Recently Added Patents
Device and method for arranging vials
Biological analysis arrangement and approach therefor
Cake knife handle
Creating three dimensional graphics data
Adaptive block pre-fetching method and system
Antenna module and wireless communication apparatus
  Randomly Featured Patents
Audio signal processing
Strained spacer design for protecting high-K gate dielectric
Laser anemometer with several measurement directions
Routing technique to adjust clock skew using frames and prongs
Film forming method
Image forming method and apparatus therefor
Mercury dispenser for discharge lamps
Print head cleaning member
Game drum having micro electrical mechanical system pressure sensing module
Vending system for remotely accessible stored information