Resources Contact Us Home
Split gate non-volatile memory cell with improved endurance and method therefor

Image Number 9 for United States Patent #7923328.

A non-volatile memory cell including a substrate in which is formed a source region and a drain region defining a channel region between the source region and the drain region is provided. The non-volatile memory cell further includes a select gate structure overlying a first portion of the channel region. The non-volatile memory cell further includes a control gate structure formed overlying a second portion of the channel region, wherein the control gate structure includes a nanocrystal stack having a height, wherein the control gate structure has a convex shape in a corner region formed at an intersection of a first plane substantially parallel to a top surface of the substrate and a second plane substantially parallel to a side surface of the control gate structure, wherein a ratio of radius of the control gate structure in the corner region to the height of the nanocrystal stack is at least 0.5.

  Recently Added Patents
Analysis of methylation using nucleic acid arrays
Fuel basket spacer, apparatus and method using the same for storing high level radioactive waste
Audio processing in a multi-participant conference
Formwork release composition and use thereof
Managing aging of silicon in an integrated circuit device
Liquid-filled protein-phosphatidic acid capsule dispersions
Motor drive component verification system and method
  Randomly Featured Patents
Cylindrical heat application apparatus
Mobile phone
Method for manufacturing an electrical capacitor
Method and apparatus for a low power self-timed memory control system
Gas permeable bioreactor and method of use
Holder fitting structure
Upright vacuum cleaner
Apparatus and method for detecting the location of an electrical discharge along the electrode wire of an EDM apparatus
Water-repellent glazing agent
Pressure cylinder with variable configuration axis