Resources Contact Us Home
Split gate non-volatile memory cell with improved endurance and method therefor

Image Number 9 for United States Patent #7923328.

A non-volatile memory cell including a substrate in which is formed a source region and a drain region defining a channel region between the source region and the drain region is provided. The non-volatile memory cell further includes a select gate structure overlying a first portion of the channel region. The non-volatile memory cell further includes a control gate structure formed overlying a second portion of the channel region, wherein the control gate structure includes a nanocrystal stack having a height, wherein the control gate structure has a convex shape in a corner region formed at an intersection of a first plane substantially parallel to a top surface of the substrate and a second plane substantially parallel to a side surface of the control gate structure, wherein a ratio of radius of the control gate structure in the corner region to the height of the nanocrystal stack is at least 0.5.

  Recently Added Patents
Water purification using energy from a steam-hydrocarbon reforming process
Systems and methods for providing a video playlist
Organic elelectroluminescent display
Probe for ultrasound diagnostic apparatus
Apparatus and method for multiple pagings in broadband wireless communication system
Calibration device and related method for phase difference between data and clock
Transitional replacement of operations performed by a central hub
  Randomly Featured Patents
Method for improving the slag quality of grate firing systems
Method of removing urea and/or creatinine
Color photographic silver halide material
High-throughput state management for TCP
Code multiplexing transmitting apparatus
Dual porosity gas evolving electrode
Process for continuously applying a water-based filler material to a substrate
Bidirectional wave division multiplex systems
Fly trap
Nucleic acid encoding .alpha. chain of human IL-11 receptor