Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method for forming low dielectric constant fluorine-doped layers










Image Number 13 for United States Patent #7910475.

A method for forming a semiconductor device is provided. In one embodiment, the method includes providing a semiconductor substrate with a surface region. The surface region includes one or more layers overlying the semiconductor substrate. In addition, the method includes depositing a dielectric layer overlying the surface region. The dielectric layer is formed by a CVD process. Furthermore, the method includes forming a diffusion barrier layer overlying the dielectric layer. In addition, the method includes forming a conductive layer overlying the diffusion barrier layer. Additionally, the method includes reducing the thickness of the conductive layer using a chemical-mechanical polishing process. The CVD process utilizes fluorine as a reactant to form the dielectric layer. In addition, the dielectric layer is associated with a dielectric constant equal or less than 3.3.








 
 
  Recently Added Patents
Vehicle and communication monitoring
Methods and systems to accomplish variable width data input
Audiovisual multi-room support
(4938
Microbial fuel cell and method of use
Vacuum cleaner filter adapter ring
Portable massage apparatus
  Randomly Featured Patents
Digital audio signal recording device for motion picture film and audio signal recording system for motion picture film employing the digital audio signal recording device
Thermal transfer hair treatment cap
Man-made textile antistatic strand
Liquid all-purpose cleaner
Apparatus for the transfer of granular, pulverulent or liquid materials
Signal transmission fuse
Connecting rod for a multiple compressor pump
Winding station
System, method and computer-accessible medium for making worker distribution plan on the basis of updated skill assessment data
Advertisement delivery system, call control apparatus, and advertisement delivery method