Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method for forming low dielectric constant fluorine-doped layers










Image Number 13 for United States Patent #7910475.

A method for forming a semiconductor device is provided. In one embodiment, the method includes providing a semiconductor substrate with a surface region. The surface region includes one or more layers overlying the semiconductor substrate. In addition, the method includes depositing a dielectric layer overlying the surface region. The dielectric layer is formed by a CVD process. Furthermore, the method includes forming a diffusion barrier layer overlying the dielectric layer. In addition, the method includes forming a conductive layer overlying the diffusion barrier layer. Additionally, the method includes reducing the thickness of the conductive layer using a chemical-mechanical polishing process. The CVD process utilizes fluorine as a reactant to form the dielectric layer. In addition, the dielectric layer is associated with a dielectric constant equal or less than 3.3.








 
 
  Recently Added Patents
Pet grooming brush and vacuum attachment
Image sensor and method for fabricating the same
Defected ground plane inductor
Case for electronic device
Method for the analysis of solid objects
Watch chain
Continuously variable transmission and control method thereof
  Randomly Featured Patents
Power factor correction circuit and driving method thereof
Non-lot based method for assembling integrated circuit devices
System and method for dual path length optical analysis of fluids downhole
Exposure for performing synchronized off-axis alignment
Air bag and air bag attachment
Nonvolatile ferroelectric memory device and driving method thereof
Monitoring module of multi-card connector
Method and arrangement for reconstruction of a received speech signal
Method for film thickness and refractive index determination
Predicting dynamic transportation demand with mobility data