Resources Contact Us Home
Method for forming low dielectric constant fluorine-doped layers

Image Number 13 for United States Patent #7910475.

A method for forming a semiconductor device is provided. In one embodiment, the method includes providing a semiconductor substrate with a surface region. The surface region includes one or more layers overlying the semiconductor substrate. In addition, the method includes depositing a dielectric layer overlying the surface region. The dielectric layer is formed by a CVD process. Furthermore, the method includes forming a diffusion barrier layer overlying the dielectric layer. In addition, the method includes forming a conductive layer overlying the diffusion barrier layer. Additionally, the method includes reducing the thickness of the conductive layer using a chemical-mechanical polishing process. The CVD process utilizes fluorine as a reactant to form the dielectric layer. In addition, the dielectric layer is associated with a dielectric constant equal or less than 3.3.

  Recently Added Patents
Satellite communication network
Display apparatus
Liquid crystal shutter glasses
Difference detecting apparatus, difference output apparatus, and medium
Modular sport center
Method and device for evaluating evolution of tumoural lesions
  Randomly Featured Patents
Wheel chock baseplate
Word and pattern recognition through overlapping hierarchical tree defined by relational features
Unitary dual tweezer
External perimeter monitoring system
Counterflow valve
Loudspeaker spider
Systems, methods, and apparatus for detection of uncorrelated component
Method and apparatus for displaying images having adjacent horizontal blocks with sharp contrast on a display unit of a television system
Battery capacity controller
Power conversion components, systems and methods