Resources Contact Us Home
Semiconductor layer structure with superlattice

Image Number 5 for United States Patent #7893424.

The semiconductor layer structure includes a superlattice composed of stacked layers of III-V compound semiconductors of a first and at least one second type. Adjacent layers of different types in the superlattice differ in composition with respect to at least one element, at least two layers of the same type have a different content of the at least one element, the content of the at least one element is graded within a layer of the superlattice, and the layers of the superlattice contain dopants in predefined concentrations, with the superlattice comprising layers that are doped with different dopants. In this way, the electrical, optical and epitaxial properties of the superlattice can be adapted in the best possible manner to given requirements, particularly epitaxial constraints.

  Recently Added Patents
Escalating data backup protection in response to a failure in a cluster of nodes
Nanowire structured photodiode with a surrounding epitaxially grown P or N layer
Autonomous primary-mirror synchronized reset
Gearbox housing
Apparatus and method for evaluating an activity distribution, and irradiation system
Blend polymer gas separation membrane
Circuit board having semiconductor chip embedded therein
  Randomly Featured Patents
Graphical user interface for displaying multimedia content for a display screen
Web 3D image display system
Cutting insert with wiper
Methods for removing residual polymer from a hydraulic fracture
Control device in an electric vehicle
Method for selectively coating a member having a shank by masking a portion of the shank with a washer
Inside-outside tube quenching method
Plasma arc coating system
Cam driven pin stripping device
Agent for coloring keratin fibers