Resources Contact Us Home
Semiconductor layer structure with superlattice

Image Number 5 for United States Patent #7893424.

The semiconductor layer structure includes a superlattice composed of stacked layers of III-V compound semiconductors of a first and at least one second type. Adjacent layers of different types in the superlattice differ in composition with respect to at least one element, at least two layers of the same type have a different content of the at least one element, the content of the at least one element is graded within a layer of the superlattice, and the layers of the superlattice contain dopants in predefined concentrations, with the superlattice comprising layers that are doped with different dopants. In this way, the electrical, optical and epitaxial properties of the superlattice can be adapted in the best possible manner to given requirements, particularly epitaxial constraints.

  Recently Added Patents
Apparatus and method for masking a clock signal
Motion compensated overlay
Silicon carbide substrate, epitaxial wafer and manufacturing method of silicon carbide substrate
Anomalous data detection method
Chemically resistant membranes, coatings and films and methods for their preparation
Maintenance tool of control systems
Composite aircraft floor system
  Randomly Featured Patents
Photographic wide angle zoom objective of the retrofocus type
Heater installation in molding members
Clock supply circuit
Brushless DC motor control method and apparatus for reduced commutation noise
Interchangeable and adjustable putter
Adiabatic dynamic logic
Electrolyte gels for maintaining hydration and rehydrating
Stabilization of waste material
Method and expert system of molecular mechanics force fields for computer simulation of molecular systems
Reversible gate latch with locking means