Resources Contact Us Home
Semiconductor layer structure with superlattice

Image Number 5 for United States Patent #7893424.

The semiconductor layer structure includes a superlattice composed of stacked layers of III-V compound semiconductors of a first and at least one second type. Adjacent layers of different types in the superlattice differ in composition with respect to at least one element, at least two layers of the same type have a different content of the at least one element, the content of the at least one element is graded within a layer of the superlattice, and the layers of the superlattice contain dopants in predefined concentrations, with the superlattice comprising layers that are doped with different dopants. In this way, the electrical, optical and epitaxial properties of the superlattice can be adapted in the best possible manner to given requirements, particularly epitaxial constraints.

  Recently Added Patents
Spatially pre-processed target-to-jammer ratio weighted filter and method thereof
Extract of Vanilla planifolia
Random sampling for geophysical acquisitions
Alleviation of laser-induced damage in optical materials by suppression of transient color centers formation and control of phonon population
Apparatus and method for information processing, program, and recording medium
Lateral double diffused metal oxide semiconductor device and method of manufacturing the same
  Randomly Featured Patents
Method and apparatus for monitoring wall thickness of blow-molded plastic containers
Brush head for large manipulators
Diffusion of elements into steel by catalyzed oxide reduction
Lock assembly for wheel supported irrigation system
Dunnage Platform
System for providing continuity between messaging clients and method therefor
Use of TGF-.beta.3, to prevent or retard fistula closure following glaucoma filtration surgery
Programmable tester
In-order delivery of plurality of RDMA messages
Gate stanchion boarding ladder for sailboats