Resources Contact Us Home
Flash memory gate structure for widened lithography window

Image Number 15 for United States Patent #7888729.

A first portion of a semiconductor substrate belonging to a flash memory device region is recessed to a recess depth to form a recessed region, while a second portion of the semiconductor substrate belonging to a logic device region is protected with a masking layer. A first gate dielectric layer and a first gate conductor layer formed within the recessed region such that the first gate conductive layer is substantially coplanar with the top surfaces of the shallow trench isolation structures. A second gate dielectric layer, a second gate conductor layer, and a gate cap hard mask layer, each having a planar top surface, is subsequently patterned. The pattern of the gate structure in the flash memory device region is transferred into the first gate conductor layer and the first gate dielectric layer to form a floating gate and a first gate dielectric, respectively.

  Recently Added Patents
Ionic liquids
Intervertebral fusion implant
Sending uplink data without synchronization
Two-dimensional optical scanner and light stimulus apparatus
Support system for histopathological diagnosis, support program for histopathological diagnosis and support method for histopathological diagnosis
Culture dish
Airbag fabric and airbag
  Randomly Featured Patents
Corner piece-less duct, method of producing the same, and duct-forming machine
Valve control
(4-phenyl-piperidin-1-yl)-[5-(1H-pyrazol-4-yl)-thiophen-3-yl]-methanone compounds and their use
Coupler for a heavy-duty machine
Thermostable DNA polymerase with enhanced thermostability and enhanced length and efficiency of primer extension
Reversible bathing brush
Vehicle mirror assembly
Card made of fluorescent material and card reader for use with the card
LCD monitor
Use of protease inhibitors for treating skin wounds