Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Flash memory gate structure for widened lithography window










Image Number 15 for United States Patent #7888729.

A first portion of a semiconductor substrate belonging to a flash memory device region is recessed to a recess depth to form a recessed region, while a second portion of the semiconductor substrate belonging to a logic device region is protected with a masking layer. A first gate dielectric layer and a first gate conductor layer formed within the recessed region such that the first gate conductive layer is substantially coplanar with the top surfaces of the shallow trench isolation structures. A second gate dielectric layer, a second gate conductor layer, and a gate cap hard mask layer, each having a planar top surface, is subsequently patterned. The pattern of the gate structure in the flash memory device region is transferred into the first gate conductor layer and the first gate dielectric layer to form a floating gate and a first gate dielectric, respectively.








 
 
  Recently Added Patents
Ignition device in particular for an internal combustion engine, and method for manufacturing same
Maesa japonica extracts and methods of use
Electric discharge machining hole drilling
Progressively discovering and integrating services
Disk drive
Systems and methods for simultaneously configuring multiple independent backups
Motor assembly
  Randomly Featured Patents
Device for measuring the absolute value of the density of salts in atmosphere
Semiconductor storage device
Self-aligned double density polysilicon lines for ROM and EPROM
Isotope separation
Pan removal ramp
Chrysanthemum plant named `Beryl`
Filter
Combined concealed carry holster undergarment and outergarment with quick release and quick access mechanisms
Arrangement for storing and launching payloads
DNAs encoding tumor necrosis factor-.alpha. muteins