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Embedded memory in a CMOS circuit and methods of forming the same

Image Number 4 for United States Patent #7888200.

In some aspects, a method of forming a memory circuit is provided that includes (1) forming a two-terminal memory element on a substrate between a gate layer and a first metal layer of the memory circuit; and (2) forming a CMOS transistor on the substrate, the CMOS transistor for programming the two-terminal memory element. Numerous other aspects are provided.

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