Resources Contact Us Home
Embedded memory in a CMOS circuit and methods of forming the same

Image Number 4 for United States Patent #7888200.

In some aspects, a method of forming a memory circuit is provided that includes (1) forming a two-terminal memory element on a substrate between a gate layer and a first metal layer of the memory circuit; and (2) forming a CMOS transistor on the substrate, the CMOS transistor for programming the two-terminal memory element. Numerous other aspects are provided.

  Recently Added Patents
Trimming circuit and semiconductor device
Determination of statistical upper bound for estimate of noise power spectral density
Processor and data transfer method
Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region
Methods of saccharification of polysaccharides in plants
Storage system with LU-setting function
Enediyne compounds, conjugates thereof, and uses and methods therefor
  Randomly Featured Patents
Steering lock for blocking the rotary movement of a motor vehicle steering shaft
Internal combustion engine provided with fuel injection device
Defragmentation of data storage pools
Caller ID blocking method and processing system (block caller ID information)
Rear cross connect DSX system
Dynamic proximity based text exchange within a group session
Hydroconversion process and catalyst
Tracheostomy tube