Resources Contact Us Home
Compensating for coupling during programming

Image Number 18 for United States Patent #7885119.

Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other adjacent charge storing elements). To compensate for this coupling, the read or programming process for a given memory cell can take into account the programmed state of an adjacent memory cell. To determine whether compensation is needed, a process can be performed that includes sensing information about the programmed state of an adjacent memory cell (e.g., on an adjacent bit line or other location).

  Recently Added Patents
Spray drying vancomycin
System for presenting media services
Managing job execution
Highly stable electrolytic water with reduced NMR half line width
Position detection device, pointing device and input device
Memory device having collaborative filtering to reduce noise
  Randomly Featured Patents
Magnetic recording structure
Cosmetic contact lens
Actuator assembly to prevent inadvertent product discharge upon installation on stem
Controller for rear brakes
Liquid development system
Arm wrestling exercise device
Clip spring member
Three-dimensional complete bandgap photonic crystal formed by crystal modification
Carbocyclic HIV protease inhibitors