Resources Contact Us Home
Compensating for coupling during programming

Image Number 16 for United States Patent #7885119.

Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other adjacent charge storing elements). To compensate for this coupling, the read or programming process for a given memory cell can take into account the programmed state of an adjacent memory cell. To determine whether compensation is needed, a process can be performed that includes sensing information about the programmed state of an adjacent memory cell (e.g., on an adjacent bit line or other location).

  Recently Added Patents
Data processor and scanner device
Cell proliferation inhibitor
Device and method for generating soft tissue contrast images
Ice tray for refrigerator
Method for delivering a volatile material
Virtual billboards
Output queued switch with a parallel shared memory, and method of operating same
  Randomly Featured Patents
Fraud risk advisor
Circuit and method for increasing the stability of switch-mode power supplies
Heat recovery from concentrated sulfuric acid
Contention slots in a shared robust scheme
Apparatus for detecting a condition of a medication infusion system and providing an informational signal in response thereto
Magnesium alloy molded product and method for manufacturing the same
Display apparatus
Multi-layered liquid crystal display panel with auxiliary supports for reinforcement of injection holes
Allergen remover
Electric devices