Resources Contact Us Home
Semiconductor device and method of manufacturing the same

Image Number 15 for United States Patent #7883983.

A method of manufacturing a semiconductor device, includes: forming a gate insulating film on a semiconductor substrate; forming a first metal film on the gate insulating film; forming a second metal film on the first metal film; and patterning a stacked film of the first and second metal films such that the stacked film is left in a gate electrode formation region and a resistive element formation region. The method further includes: removing the second metal film in the resistive element formation region with protecting a contact hole formation region. The method further includes: forming an interlayer insulating film so as to cover the stacked film; and removing the interlayer insulating film formed in the contact hole formation region to form a contact hole leading to the second metal film.

  Recently Added Patents
Magnetic storage apparatus
Method for preparing an organic film at the surface of solid support under non-electrochemical conditions, solid support thus obtained and preparation kit
Method, apparatus and article for detection of transponder tagged objects, for example during surgery
Prevention and treatment of osteoarthritis
Integrated circuit testing with power collapsed
Image processing system and method
Storage device performance alignment notification
  Randomly Featured Patents
Portion of an interface for a medical instrument
Instant reversing transmission
Combined radial and thrust bearing
Method for treating hyperlipemia
Coil system for volume-selective magnetic resonance spectroscopy
Highly repellent carpet protectants
Stabilized block pesticide compositions
Hyperbranched organic modifier, method of preparing thereof and organo-modified clay using the same
Liquid crystal display device with parallel field having particular spacing and width