Resources Contact Us Home
Semiconductor device and method of manufacturing the same

Image Number 14 for United States Patent #7883983.

A method of manufacturing a semiconductor device, includes: forming a gate insulating film on a semiconductor substrate; forming a first metal film on the gate insulating film; forming a second metal film on the first metal film; and patterning a stacked film of the first and second metal films such that the stacked film is left in a gate electrode formation region and a resistive element formation region. The method further includes: removing the second metal film in the resistive element formation region with protecting a contact hole formation region. The method further includes: forming an interlayer insulating film so as to cover the stacked film; and removing the interlayer insulating film formed in the contact hole formation region to form a contact hole leading to the second metal film.

  Recently Added Patents
Method for superconducting connection between MgB2 superconducting wires via a MgB2 matrix made from a boron powder compressed element infiltrated with Mg
Prevention and reduction of blood loss
Generating network topology parameters and monitoring a communications network domain
Accessory sleeve
Apparatus and method for storing event information for an HVAC system
Method and apparatus for determining storage capacity error for a data storage device
  Randomly Featured Patents
Print control apparatus
Plants and seeds of corn variety I285287
Gas burner having synchronous ignition and gas supply functions
Negative-working imageable elements
Crash control system for vehicles employing predictive pre-crash signals
Coupling assembly
Hair drier with minus ion producer
Dewar construction for cooling radiation detector cold finger
Inventory control probe and control module with docking station
Polymers derived from .alpha., .beta.-unsaturated polycarboxylic acids or anhydrides and n-substituted acrylamides, and use in reducing scale