Resources Contact Us Home
Semiconductor device and method of manufacturing the same

Image Number 11 for United States Patent #7883983.

A method of manufacturing a semiconductor device, includes: forming a gate insulating film on a semiconductor substrate; forming a first metal film on the gate insulating film; forming a second metal film on the first metal film; and patterning a stacked film of the first and second metal films such that the stacked film is left in a gate electrode formation region and a resistive element formation region. The method further includes: removing the second metal film in the resistive element formation region with protecting a contact hole formation region. The method further includes: forming an interlayer insulating film so as to cover the stacked film; and removing the interlayer insulating film formed in the contact hole formation region to form a contact hole leading to the second metal film.

  Recently Added Patents
Translation of entity names based on source document publication date, and frequency and co-occurrence of the entity names
Reconfigurable wideband receiver
System and method for detecting hacked modems
End user controlled temporary phone service device swapping system and method
Fan unit assembly
Evaluating airport runway conditions in real time
Metallic floor box with non-metallic riser and flange
  Randomly Featured Patents
LAN connection using analog modems via telephone wiring
Fuel injector actuator assemblies and associated methods of use and manufacture
Method for fabricating an angled diffraction grating
Device for surface coating or lacquering of substrates
Process for producing acetic anhydride and acetic acid
System for generating a discrete liquid phase in a continuous liquid phase
Method and system for remotely viewing and configuring output from a medical imaging device
Apparatus for use on printing presses to insure optimum color density and to assist in making corrective adjustment
Laundry bag backpack
Structure for reducing wind noise