Resources Contact Us Home
Semiconductor device and method of manufacturing the same

Image Number 11 for United States Patent #7883983.

A method of manufacturing a semiconductor device, includes: forming a gate insulating film on a semiconductor substrate; forming a first metal film on the gate insulating film; forming a second metal film on the first metal film; and patterning a stacked film of the first and second metal films such that the stacked film is left in a gate electrode formation region and a resistive element formation region. The method further includes: removing the second metal film in the resistive element formation region with protecting a contact hole formation region. The method further includes: forming an interlayer insulating film so as to cover the stacked film; and removing the interlayer insulating film formed in the contact hole formation region to form a contact hole leading to the second metal film.

  Recently Added Patents
Monitoring heap in real-time by a mobile agent to assess performance of virtual machine
Method of manufacturing semiconductor devices using ion implantation
Methods of making a diagnostic device by interweaving hydrophobic and hydrophilic fibers, and diagnostic device therefrom
Controlling a resource demand system
Linerless labels
  Randomly Featured Patents
Liquid crystal display device and method of fabricating the same
Non-volatile, radiation-hard, random-access memory
Transflective display
Mudguard gritter
Selective simultaneous communication with a wireless communication device based on location and mobility
Semiconductor memory device having processor reset function and reset control method thereof
Automatic ice making machine
Apparatus and methods for processing a vestigial sideband signal using a sectionalizing adaptive equalizer
Cutting tool
Tool and method for the machine working of workpieces