Resources Contact Us Home
Semiconductor device and method of manufacturing the same

Image Number 11 for United States Patent #7883983.

A method of manufacturing a semiconductor device, includes: forming a gate insulating film on a semiconductor substrate; forming a first metal film on the gate insulating film; forming a second metal film on the first metal film; and patterning a stacked film of the first and second metal films such that the stacked film is left in a gate electrode formation region and a resistive element formation region. The method further includes: removing the second metal film in the resistive element formation region with protecting a contact hole formation region. The method further includes: forming an interlayer insulating film so as to cover the stacked film; and removing the interlayer insulating film formed in the contact hole formation region to form a contact hole leading to the second metal film.

  Recently Added Patents
RF/optical shared aperture for high availability wideband communication RF/FSO links
Methods and devices for rapid and specific detection of multiple proteins
Reduced plating ignitron
Display apparatus
Image forming apparatus with enhanced display of guidance information
Method of forming an isolation structure
Unified recovery
  Randomly Featured Patents
Input interface device with transformable form factor
Flexible ceramic member having a pre-loaded tensile force applying means
Low pressure drop deep electrically enhanced filter
Amphoterics as emulsifiers for bituminous emulsions
Image extraction system for extracting patterns such as characters, graphics and symbols from image having frame formed by straight line portions
Radiation imaging apparatus and method for controlling radiation imaging apparatus
Circuit element having a first layer of an electrically insulating substrate material and method for manufacturing a circuit element
Dynamic expiration of domain name service entries
Thin capacitive structure
Disc module spacer improvement