Image Number 13 for United States Patent #7880301.
A semiconductor device includes a semiconductor element including a semiconductor substrate having an element region, a laminated film formed on the semiconductor substrate and including a low dielectric constant insulating film, and a laser-machined groove provided to cut at least the low dielectric constant insulating film. The semiconductor element is connected to a wiring substrate via a bump electrode. An underfill material is filled between the semiconductor element and the wiring substrate. The fillet length Y (mm) of the underfill material satisfies a condition of Y>-0.233X+3.5 (where X>0, and Y>0) with respect to the width X (.mu.m) of the laser-machined groove.
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