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Method of accessing semiconductor circuits from the backside using ion-beam and gas-etch

Image Number 6 for United States Patent #7867910.

The invention generally relates to semiconductor device processing, and more particularly to methods of accessing semiconductor circuits from the backside using ion-beam and gas-etch to mill deep vias through full-thickness silicon. A method includes creating a pocket in a material to be etched, and performing an isotropic etch of the material by flowing a reactive gas into the pocket and directing a focused ion beam into the pocket.

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