Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Methods of fabricating a barrier layer with varying composition for copper metallization










Image Number 13 for United States Patent #7863179.

Various embodiments provide improved processes and systems that produce a barrier layer with decreasing nitrogen concentration with the increase of film thickness. A barrier layer with decreasing nitrogen concentration with film thickness allows the end of barrier layer with high nitrogen concentration to have good adhesion with a dielectric layer and the end of barrier layer with low nitrogen concentration (or metal-rich) to have good adhesion with copper. An exemplary method of depositing a barrier layer on an interconnect structure is provided. The method includes (a) providing an atomic layer deposition environment, (b) depositing a barrier layer on the interconnect structure with a first nitrogen concentration during a first phase of deposition in the atomic layer deposition environment. The method further includes (c) continuing the deposition of the barrier layer on the interconnect structure with a second nitrogen concentration during a second phase deposition in the atomic layer deposition environment.








 
 
  Recently Added Patents
Camera system, video processing apparatus, and camera apparatus
Communication device and method for detecting a radio signal
Non-aqueous electrolyte battery
Integrated wire carrier for electrode array
Active constant power supply apparatus
Terminal device, system and computer readable medium
Dyes and methods of marking biological material
  Randomly Featured Patents
Arrangements for constructing representations of parts of bodies
Process for measuring using standard blocks and a standard measuring block
Cell phone case with headset holder
Method and apparatus for automatic volume control in an audio player of a mobile communication terminal
Apparatus and method for die casting
Frame and pad filter system
Method of evaluating semiconductor device and method of manufacturing semiconductor device
Ferroelectric memory devices with improved ferroelectric properties and associated methods for fabricating such memory devices
Signature verification method and apparatus utilizing both acceleration and pressure characteristics
Parachute