Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Semiconductor device and manufacturing method thereof










Image Number 14 for United States Patent #7863162.

A manufacturing method of a semiconductor device in which the oxygen and carbon concentrations are reduced at the interface of each layer making up the semiconductor multilayer film. A first semiconductor layer is formed on a single-crystal substrate in a first reactor; the substrate is transferred from the first reactor to a second reactor through a transfer chamber; and a second semiconductor layer is formed on the first semiconductor layer in the second reactor. During substrate transfer, hydrogen is supplied when the number of hydrogen atoms bonding with the surface atoms of the first semiconductor layer is less than the number of surface atoms of the first semiconductor layer, and the supply of hydrogen is stopped when the number of hydrogen atoms bonding with the surface atoms of the first semiconductor layer is greater than the number of surface atoms of the first semiconductor layer.








 
 
  Recently Added Patents
Solid state lighting circuit and controls
Image reading apparatus
Semiconductor overlapped PN structure and manufacturing method thereof
Prevention and treatment of osteoarthritis
Optical cable plug-in detection
Method of monitoring and configuring
Method and apparatus for wireless communication in a mesh network with central control of communication relationships
  Randomly Featured Patents
Suspended uneven parallel bars for competitive womens gymnastics
Method of and apparatus for producing duplicates in color
Flameless deicer
Circuit arrangement for the automatic, adaptive distortion correction of ringings of at least three-stage base band signal
Vise
Seat back for a motor vehicle rear seat assembly
Hydrophilic polyurethane composition
Thin-film conductor and method of fabricating the same
Size for glass fibers
Package for heating food in electrical appliances