Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Semiconductor device and manufacturing method thereof










Image Number 14 for United States Patent #7863162.

A manufacturing method of a semiconductor device in which the oxygen and carbon concentrations are reduced at the interface of each layer making up the semiconductor multilayer film. A first semiconductor layer is formed on a single-crystal substrate in a first reactor; the substrate is transferred from the first reactor to a second reactor through a transfer chamber; and a second semiconductor layer is formed on the first semiconductor layer in the second reactor. During substrate transfer, hydrogen is supplied when the number of hydrogen atoms bonding with the surface atoms of the first semiconductor layer is less than the number of surface atoms of the first semiconductor layer, and the supply of hydrogen is stopped when the number of hydrogen atoms bonding with the surface atoms of the first semiconductor layer is greater than the number of surface atoms of the first semiconductor layer.








 
 
  Recently Added Patents
Apparatus and method for providing vehicle data for testing product
Heat transfer label for decorating a metal container
Recovery of a hot-pluggable serial communication link
Electronic package with fluid flow barriers
Energy storage device package
Dual-leadframe multi-chip package and method of manufacture
Persistent luminescence nanoparticles used in the form of a diagnosis agent for in vivo optical imaging
  Randomly Featured Patents
Fluidic oscillator
Electrothermal instrument for sealing and joining or cutting tissue
Hose coupling with retainer ring
Pillow
Adjuvant therapy with an anti-ERBB2 antibody conjugated to a maytansiniod
Fret assembly
Image forming apparatus utilizing a light image memory
Screw driven hoist
Fluorination catalyst and process
Feed and animal enclosure