Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Semiconductor device and manufacturing method thereof










Image Number 14 for United States Patent #7863162.

A manufacturing method of a semiconductor device in which the oxygen and carbon concentrations are reduced at the interface of each layer making up the semiconductor multilayer film. A first semiconductor layer is formed on a single-crystal substrate in a first reactor; the substrate is transferred from the first reactor to a second reactor through a transfer chamber; and a second semiconductor layer is formed on the first semiconductor layer in the second reactor. During substrate transfer, hydrogen is supplied when the number of hydrogen atoms bonding with the surface atoms of the first semiconductor layer is less than the number of surface atoms of the first semiconductor layer, and the supply of hydrogen is stopped when the number of hydrogen atoms bonding with the surface atoms of the first semiconductor layer is greater than the number of surface atoms of the first semiconductor layer.








 
 
  Recently Added Patents
Methods, systems, and products for searching interactive menu prompting systems
Method and apparatus for web crawling
Dynamic data caches, decoders and decoding methods
Method of inspecting wafer
Sense-amplifier monotizer
Flexible lighting devices
Process for the production of electric energy by the excitation and capture of electrons from ground or water sources
  Randomly Featured Patents
Reticulated material body support and method
Hollow gasket welder
Entertainment apparatus
Cookie pan
Electromagnetic actuator and stator design in a fuel injector assembly
Autonomous spacecraft controller and related method
Phase mixer
Apparatus for longitudinal slicing of cylindrical body
Method and a system for processing logic programs
High speed turnover apparatus and method