Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Low threshold voltage semiconductor device with dual threshold voltage control means










Image Number 4 for United States Patent #7858500.

A semiconductor structure, particularly a pFET, which includes a dielectric material that has a dielectric constant of greater than that of SiO.sub.2 and a Ge or Si content of greater than 50% and at least one other means for threshold/flatband voltage tuning by material stack engineering is provided. The other means contemplated in the present invention include, for example, utilizing an insulating interlayer atop the dielectric for charge fixing and/or by forming an engineered channel region. The present invention also relates to a method of fabricating such a CMOS structure.








 
 
  Recently Added Patents
Method and apparatus for encoding and decoding video based on first sub-pixel unit and second sub-pixel unit
System and method for calibrating display device using transfer functions
Semiconductor device and manufacturing method thereof
System and method for updating firmware
Pet cremation urn
Tint block image generation program and tint block image generation device
System for thermally controlling displays
  Randomly Featured Patents
Casing structure of metal construction
Liquid ejection recording head including a symbol indicating information used for changing the operation of the head
Automatic needle threader
Integrated circuit with stacked MOS field effect transistors
Controllable trocar for transmyocardial revascularization (TMR) via endocardium method and apparatus
Method and configuration for facilitating the fuel feed into a pressurized space
Dual frequency electrostatic coalescence
Portion of a ceiling fan housing
Apparatus and methods for using fiber optic arrays in optical communication systems
Battery case