Resources Contact Us Home
Plasma processing method and plasma processing apparatus

Image Number 6 for United States Patent #7858155.

It is intended to provide a plasma processing method and apparatus capable of increasing the uniformity of amorphyzation processing.A prescribed gas is introduced into a vacuum container 1 from a gas supply apparatus 2 through a gas inlet 11 while being exhausted by a turbomolecular pump 3 as an exhaust apparatus through an exhaust hole 12. The pressure in the vacuum container 1 is kept at a prescribed value by a pressure regulating valve 4. High-frequency electric power of 13.56 MHz is supplied from a high-frequency power source 5 to a coil 8 disposed close to a dielectric window 7 which is opposed to a sample electrode 6, whereby induction-coupled plasma is generated in the vacuum container 1. A high-frequency power source 10 for supplying high-frequency electric power to the sample electrode 6 is provided and functions as a voltage source for controlling the potential of the sample electrode 6. A surface crystal layer of a silicon wafer 9 was rendered amorphous successfully by improving the structure of the sample-electrode 6.

  Recently Added Patents
Can seam inspection
Detection of bioagents using a shear horizontal surface acoustic wave biosensor
Substrate processing apparatus and display method of substrate processing apparatus
Dynamic load profiling in a power network
Content protection apparatus and content encryption and decryption apparatus using white-box encryption table
Stacked magnetoresistance device responsive to a magnetic field generally perpendicular to a side face running along a channel of the device
Replacing memory pointers with implicit pointers to be used in compiler-generated debug output
  Randomly Featured Patents
Unit for rolling pipes on a mandrel
Vehicle restraint apparatus
Alphavirus vector constructs
Safety restraint apparatus
Conveyor system with lifting mechanism
Condiment shaker
Wheelchair automatic anti-rollback assembly
Method of manufacturing a semiconducter device capable of easily forming metal silicide films on source and drain regions
Pipe couplings
Thyristor with auxiliary emitter electrode and short-circuit regions and method