Resources Contact Us Home
Method of forming a contact hole and method of manufacturing a semiconductor device having the same

Image Number 12 for United States Patent #7846825.

In a method of forming a contact hole and a method of manufacturing a semiconductor device having the same, a first insulation interlayer is formed on a substrate. A dummy pattern is formed on the first insulation interlayer. A second insulation interlayer is formed to cover the dummy pattern. A photoresist pattern is formed on the second insulation interlayer. The photoresist pattern has an exposed portion. The dummy pattern under the photoresist pattern is arranged to cross over the exposed portion of the photoresist pattern. The first and second insulation interlayers are etched using the photoresist pattern and the dummy pattern as an etching mask, to form a plurality of contact holes on both sides of the dummy pattern. Accordingly, the contact holes may be formed to have a smaller width.

  Recently Added Patents
Video reproducing apparatus and video reproducing method
System and method for broadcasting rich media to devices over multiple carriers
Pet carrier
Semiconductor apparatus
Method and system for detecting data modification within computing device
Modular sport center
Transcription factor
  Randomly Featured Patents
Crystalline N-{(1S)-2-amino-1-[(3-fluorophenyl)methyl]ethyl}-5-chloro-4-(4-chloro-1-m- ethyl-1H-pyrazol-5-yl)-2-thiophenecarboxamic hydrochloride
Clutch mechanism for reciprocating saws
Circuit configuration for supplying an electronic load circuit
Unitary combined backer and siding board
Headlamp for an automobile
Hair clip
Clock signal distribution circuit
Expression of human milk proteins in transgenic plants
Computer-assisted method and apparatus for absentee sellers to participate in auctions and other sales
Arrangement for mounting hinge pin sockets to cabinet doors