Resources Contact Us Home
Method of forming a contact hole and method of manufacturing a semiconductor device having the same

Image Number 12 for United States Patent #7846825.

In a method of forming a contact hole and a method of manufacturing a semiconductor device having the same, a first insulation interlayer is formed on a substrate. A dummy pattern is formed on the first insulation interlayer. A second insulation interlayer is formed to cover the dummy pattern. A photoresist pattern is formed on the second insulation interlayer. The photoresist pattern has an exposed portion. The dummy pattern under the photoresist pattern is arranged to cross over the exposed portion of the photoresist pattern. The first and second insulation interlayers are etched using the photoresist pattern and the dummy pattern as an etching mask, to form a plurality of contact holes on both sides of the dummy pattern. Accordingly, the contact holes may be formed to have a smaller width.

  Recently Added Patents
System and method for identifying a target signal in an optical transport network frame structure
Cardiac function management integrating cardiac contractility modulation
Video processing system and device with encoding and decoding modes and method for use therewith
Cooling structure for electronic device
Spreading technique applied to broadband mobile communications by satelite relying on DVB-RCS
Computer-implemented method of constructing a stock index using index rotation
Solution based precursors
  Randomly Featured Patents
Gels with a shape memory
Motor vehicle and/or toy replica thereof
Side plate for a handle
Pleasant-feeling fragrance sampler containing microcapsules
Method of spray forming readily weldable and machinable metal deposits
Rotary drive system
Hand device
Method of manufacturing flash memory device
Method and apparatus for cooling fluid solid particles used in a regeneration system