Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
DC-DC converter










Image Number 18 for United States Patent #7825765.

In a DC to DC converter, first and second primary windings are magnetically coupled to a first secondary winding. Third and fourth primary windings are magnetically coupled to a second secondary winding. The first and second primary windings are magnetically coupled to the first secondary winding. The third and fourth primary windings are magnetically coupled to the second secondary winding. The first and third primary windings are coupled in series to form a first coil member. The second and fourth primary windings are coupled in series to form a second coil member. One end of the first coil member is coupled to the first positive power line. A first switching element is coupled between the first negative power line and the other end of the first coil member. A first capacitor is coupled between the first negative terminal and one end of the second coil member.








 
 
  Recently Added Patents
Method and system for filtering home-network content
360-degree angle decoder
Pressure-sensitive adhesive composition having an improved release behavior
Storage system with LU-setting function
Control unit of a ride level control system, and ride level control system
Elastic polypropylene-based film compositions
Hemostatic devices and methods of making same
  Randomly Featured Patents
Control apparatus and control method for optical switch using MEMS mirrors
Semiconductor device having a two-layer gate structure
Frame profile for a moveable pallet
Apparatus for determining a tilt angle of a tub in a convertible washing machine
Vehicle headlight testing apparatus
Pulse width modulation method and apparatus
Information processing apparatus, information processing method, program storage medium and program
Lower connector for a fuel assembly of a nuclear reactor, comprising an adaptor plate and a filtration plate
Method of analysis of serial visual fields
Gallium nitride high electron mobility transistor structure