Resources Contact Us Home
Selective plasma processing method

Image Number 13 for United States Patent #7811945.

A selective plasma processing method, within a processing chamber of a plasma processing apparatus, acts oxygen-containing plasma on a target object having silicon and a silicon nitride layer to selectively oxidize the silicon with respect to the silicon nitride layer and to form a silicon oxide film. Further, the ratio of a thickness of a silicon oxynitride film formed within the silicon nitride layer to a thickness of the silicon oxide film formed by the oxidization is equal to or smaller than 20%.

  Recently Added Patents
Audio signal clip detection
Motion compensated overlay
Information processing using batch setting information
Woven mesh substrate with semiconductor elements, and method and device for manufacturing the same
Identifying a characteristic of an individual utilizing facial recognition and providing a display for the individual
System and method for creating, managing and trading hedge portfolios
Quinazoline compounds and their use in perfume compositions
  Randomly Featured Patents
Recording apparatus
Hand portable support for a digital keyboard
Apparatus and method for mode recommendation in a variable displacement engine
Simplified test element advancing mechanism having positive engagement with element
Display package for an archery bow
Perforating device for dermal administration
PSA process with reaction for reversible reactions
Door opening device for wheelchair-bound persons
Method of controlling ignition timing of compression ignition engine of premixed mixture type
Self-synchronizing optical imaging system