Resources Contact Us Home
Selective plasma processing method

Image Number 13 for United States Patent #7811945.

A selective plasma processing method, within a processing chamber of a plasma processing apparatus, acts oxygen-containing plasma on a target object having silicon and a silicon nitride layer to selectively oxidize the silicon with respect to the silicon nitride layer and to form a silicon oxide film. Further, the ratio of a thickness of a silicon oxynitride film formed within the silicon nitride layer to a thickness of the silicon oxide film formed by the oxidization is equal to or smaller than 20%.

  Recently Added Patents
Image stabilization apparatus and image pickup apparatus
Piezoelectric device and fabricating method thereof
Real-time application of filters based on image attributes
Optical coherence tomography with multiple sample arms
Method for manufacturing and reoxidizing a TiN/Ta.sub.2O.sub.5/TiN capacitor
Information processing apparatus and method
Techniques for distributed storage aggregation
  Randomly Featured Patents
Tape measure for determining the centerpoint of a distance
Electrochemical synthesis of diaryliodonium salts
Technique to generate divide by two and 25% duty cycle
Low-volume ice making machine
Amphipathic aldehydes and their uses as adjuvants and immunoeffectors
Well information telemetry by variation of mud flow rate
Methods for epitope-specific and cytokine/anticytokine combination immunotherapies
External surface configuration for the front panel of a stove
Oil and gas water heater
Container for storing and shipping radioactive materials