Resources Contact Us Home
Method for forming dual damascene pattern

Image Number 3 for United States Patent #7811929.

A method for forming a dual damascene pattern includes preparing a multi-functional hard mask composition including a silicon resin as a base resin; forming a deposition structure including a self-arrangement contact insulation film, a first dielectric film, an etching barrier film, and a second dielectric film over a hardwiring layer; etching the deposition structure to expose the hardwiring layer, thereby forming a via hole; forming the multi-functional hard mask composition on the second dielectric film and in the via hole to form a multi-functional hard mask film; and etching the resulting structure to expose a part of the first dielectric film, thereby forming a trench having a width wider than that of the via hole; and removing the multi-functional hard mask film.

  Recently Added Patents
Process for preparing substituted aromatic carboxylic acids
Communication system including a switching section for switching a network route, controlling method and storage medium
Synthesized interoperable communications
Vehicle location information-based abnormal driving determination and warning system
Memory management configuration
Methods for selective reverse mask planarization and interconnect structures formed thereby
  Randomly Featured Patents
System and method for ingesting media content in a peer-to-peer network
Leukotriene B4 antagonist compounds and method for treatment
Abnormality detecting method for a servo system
Process for recovery of chemicals from pulping waste liquor
Joint channel estimation and modulation detection
Combined toilet seat and cover
Thermal printer
Universal motion and intrusion detection system
Semiconductor device module
Microbiological production of essential fatty acids